Samsung Electronics Co., Ltd.

Samsung Sdi Co., Inc.

Jung-Soo An

Si-Young Choi

Yu-Gyun Shin

Dong-Chan Kim

Tai-Su Park

Jong-Ryeol Yoo

Dong-Kyu Lee

Seong-Hoon Jeong

Suk-Ki Kim

Jong-Hoon Kang

Jeong-Do Ryu

Jung-Sup Oh

Gun-Joong Lee

Jung-Geun Park

In methods of manufacturing a recessed channel array transistor, a recess may be formed in an active region of a substrate. A plasma oxidation process may be performed on the substrate to form a preliminary gate oxide layer on an inner surface of the recess and an upper surface of the substrate. Moistures may be absorbed in a surface of the preliminary gate oxide layer to form a gate oxide layer. A gate electrode may be formed on the gate oxide layer to fill up the recess. Source/drain regions may be formed in an upper surface of the substrate at both sides of the gate electrode. Thus, the oxide layer may have a uniform thickness distribution and a dense structure.

Methods of forming recessed channel array transistors and methods of manufacturing semiconductor devices

A method of driving a plasma display device having a first electrode and a second electrode adjacent to one another in a discharge cell, including applying a first waveform at least once to the first electrode, the first waveform including a gradual increase from a first voltage to a second voltage followed by a gradual decrease from a third voltage to a fourth voltage, and applying a second waveform at least once to the first electrode after the first waveform is applied to the first electrode, the second waveform including a gradual increase from a fifth voltage to a sixth voltage followed by a gradual decrease from a seventh voltage to an eighth voltage. The first and second waveforms may be applied to the first electrode after turning on the plasma display device and before a display operation is performed.

Plasma display device and driving method thereof with an initial driving waveform

Growing community of inventors

Suwon-si, South Korea

Jung-Soo An