Samsung Electronics Co., Ltd.

Cheil Industries Inc.

Sungkyunkwan University

Dow Silicones Corporation

Jung Sik Choi

Hyoun Young Kim

Jeong Ku Kang

Youn Joung Cho

Chang Bum Chung

Won Woong Chung

Hwan Soo Han

Ji Won Kim

Xiaobing Zhou

Kil Sung Lee

Brian David Rekken

Jae Sun Han

Michael David Telgenhoff

Byung Keun Hwang

Tu Won Chang

Jin Man Kim

Ki Sung Jung

Sun Hye Hwang

Jong Hwa Lee

Hee Kon Kim

Jeong Min Hong

Sung Bin An

A method of handling a page fault occurring in a non-volatile main memory system including analyzing a pattern of occurrence of the page fault based on the page fault when the page fault occurs, setting the number of pages to be consecutively processed based on analysis result of the analyzing, and consecutively processing as many pages as the number may be provided.

Method of handling page fault in nonvolatile main memory system

A memory mapping management method for a system using nonvolatile memory (NVM) as main memory, including receiving a request to cancel a memory mapping, determining whether the memory mapping is a mapping of a file based on meta data relating to the memory mapping, separately storing the meta data when the memory mapping is the mapping of the file, and cancelling the memory mapping when the memory mapping is not the mapping of the file may be provided. Further, the memory mapping management method may include receiving a memory mapping request, searching for a memory mapping for a file in a memory mapping storage space when a requested memory mapping is a mapping of the file, and reusing a searched memory mapping found during the search when a region of the searched memory mapping includes a region required by the requested memory mapping in a virtual address space.

Memory mapping management method for nonvolatile main memory system

A method for fabricating a semiconductor device includes forming a structure with a height difference on a substrate and forming a dielectric layer structure on the structure using an atomic layer deposition (ALD) method. Forming the dielectric layer structure includes forming a first dielectric layer including silicon nitride on the structure with the height difference. Forming the first dielectric layer includes feeding a first gas including pentachlorodisilane (PCDS) or diisopropylamine pentachlorodisilane (DPDC) as a silicon precursor, and a second gas including nitrogen components into a chamber including the substrate such that the first dielectric layer is formed in situ on the structure having the height difference.

Method for fabricating semiconductor device including forming a dielectric layer on a structure having a height difference using ALD

Methods and apparatuses are provided for operating a touch module of an electronic device. A communication related event is received at the electronic device. The touch module is switched from operation at a first operating frequency to operation at a second operating frequency, upon reception of the communication related event. The first operating frequency enables the touch module to receive a touch input. The second operating frequency enables the touch module to detect a specified event.

Method of operating touch module and electronic device supporting same

There is provides a method of fabricating a semiconductor device to decrease contact resistance of source/drain regions and gate electrodes and thereby improve operation performance. The method includes providing an exposed silicon region, forming a rare earth metal silicide film on the exposed silicon region, the rare earth metal silicide film contacting the silicon region, and forming a contact on the rare earth metal silicide film, the contact being electrically connected to the exposed silicon region, wherein the rare earth metal silicide film is formed by simultaneously supplying a rare earth metal and silicon to the exposed silicon region using physical vapor deposition.

Method of fabricating a semiconductor device

An anisotropic conductive film (ACF) composition includes a binder having a thermoplastic resin and a styrene-acrylonitrile (SAN) copolymer resin, a curing composition, and conductive particles.

Anisotropic conductive film composition

Disclosed herein is an anisotropic conductive film forming composition, including at least one polymer comprising a polymer containing a silane group; at least one polymerizable compound; and a plurality of conductive particles. The at least one polymer may include an elastomeric polymer and a filler polymer, at least one of which contains a silane group. The at least one polymerizable compound may include a cross-linking agent and/or a polymerization reaction enhancer. The cross-linking agent may also have a silane group. In addition, the film forming composition may include a solvent. The film forming composition is advantageous in that the resulting anisotropic conductive film exhibits enhanced peel and adhesive strength and low electrical contact resistance.

Anisotropic conductive film forming composition

A photosensitive resin composition for forming column spacers for a liquid crystal display device is provided. The composition includes an alkali-soluble resin, a reactive unsaturated compound, a photoinitiator and a solvent. The alkali-soluble resin includes structural units represented by Formulae 1, 2 and 3, which are described in the specification. A pattern formed using the composition is also provided. The pattern shows improved thickness uniformity, good developability without leaving any residual image, superior solvent resistance and high recovery rate.

Photosensitive resin composition for column spacers for liquid crystal display device, column spacers formed using the composition and display device comprising the column spacers

Growing community of inventors

Suwon-si, South Korea

Jung Sik Choi