Skhynix Inc.

Hynix Semiconductor Inc.

Otis Elevator Company

Wizmax, Co., Ltd.

Jung Sam Kim

Hansoo Shim

Jinkoo Lee

Mark Steven Thompson

Guohong Hu

Ji Hoon Lee

JinKyu Ryu

Byeong Sam Yoo

June Kee Jung

Gi Hoon Keum

Seung Hong Kim

An elevator door stopping device which can prevent that elevator door is closed by itself when power supplied to a motor for opening and closing the elevator door is interrupted, an improvement of the elevator door stopping device characterized in that a first magnetic body is fixed on a shaft rotating in interlock with opening and closing of the elevator door so as to generate a magnetic force in a radial direction perpendicular to the shaft, and a second magnetic body is fixed on a fixed face spaced apart from the first magnetic body at a predetermined interval in the radial direction in such a manner that the second magnetic body has the opposite pole to the first magnetic body, so that a magnetic force is generated between the first magnetic body and the second magnetic body in the radial direction perpendicular to the shaft.

Elevator door stopping device

A device for inhibiting the closing of a door that controls entry of an enclosure includes a first magnet disposed on a driven portion of the device and a second magnet disposed on a fixed portion of the enclosure. The first magnet and the second magnet are configured to be in register with each other as the door moves toward a closed position such that if the first magnet and the second magnet are in register with each other, a pole of the first magnet is in close proximity of a pole of the second magnet such that the first magnet and the second magnet react to each other to inhibit motion of the door towards the closed position.

Braking device for a door operator

A semiconductor device includes a semiconductor substrate including a pad region and a peripheral region, a first buffer layer formed to include a capacitor over the semiconductor substrate in the pad region, a second buffer layer formed to include a first contact pad over the first buffer layer, and a third buffer layer formed to include a second contact pad over the first contact pad. The semiconductor device, by additionally forming a buffer layer at a lower part in the pad region, reduces a stress caused by wire bonding. Thus, an applied stress to a lower structure in the pad region is also reduced. As a result, the buffer layer prevents formation of an electrical bridge between the pad region and the peripheral region.

Semiconductor device and method for forming the same

A semiconductor device includes a first pad region including a plurality of first storage nodes, a second pad region neighboring the first pad region and including a plurality of second storage nodes, a coupling portion disposed between the first pad region and the second pad region, and a plate electrode disposed over the plurality of first storage nodes of the first pad region and the plurality of second storage nodes of the second pad region, and disposed in the coupling portion to interconnect the first pad region and the second pad region.

A semiconductor device and a method for forming the same are disclosed, which relate to a reservoir capacitor. The semiconductor device includes: an active region defined by forming a device isolation region over a semiconductor substrate of peripheral region; gate electrodes formed over the active region; a plurality of metal lines over the gate electrodes; a plurality of contact slits elongated into the gate electrode at a position between the plurality of metal lines, a plurality of the first capacitors respectively formed over the plurality of metal lines, and a plurality of the second capacitors respectively formed over the plurality of contact slits.

A method for forming a semiconductor device is disclosed. An anti-fuse is formed at a buried bit line such that the area occupied by the anti-fuse is smaller than that of a conventional planar-gate-type anti-fuse, and a breakdown efficiency of an insulation film is increased. This results in an increase in reliability and stability of the semiconductor device. A semiconductor device includes a line pattern formed over a semiconductor substrate, a device isolation film formed at a center part of the line pattern, a contact part formed at both sides of the line pattern, configured to include an oxide film formed over the line pattern, and a bit line formed at a bottom part between the line patterns, and connected to the contact part.

A semiconductor device includes a semiconductor substrate including an active region and a gate region, and a gate channel formed in a portion of the active region that overlaps the gate region. The gate channel includes a recessed multi-bulb structure.

Method for manufacturing a semiconductor device

A method for combining multimedia files according to the present invention includes a step of selecting a plurality of files of the same kinds or different kinds, a step of checking the structures of the selected files, and a step of combining the selected files based on their structures. Various useful information for users can also be added to the combined files to provide the users better service. The present invention can be implemented in an on-line system as well as an off-line system.

Growing community of inventors

Seoul, South Korea

Jung Sam Kim