Samsung Electronics Co., Ltd.

Jung-Saeng Kim

Yun Ki Lee

Bumsuk Kim

Taesub Jung

Min Hee Jang

Jonghoon Park

Changrok Moon

Hyukjin Jung

Dongmin Keum

Bum Suk Kim

Jun Sung Park

Bomi Kim

Hyungeun Yoo

Jong Hoon Park

June-Taeg Lee

Chang Rok Moon

Sung-kwan Kim

Jeong-Wook Ko

Yong Kim

Dong Kyu Lee

Seungjoo Nah

Junetaeg Lee

Tae Sung Lee

Dongmin Han

An image sensor includes a semiconductor layer including a first section and a second section, the semiconductor layer having a first surface and a second surface that face each other, a device isolation layer in the semiconductor layer and defining a plurality of pixels; a first grid pattern on the first surface of the semiconductor layer over the first section; and a light-shield pattern on the first surface of the semiconductor layer over the second section. A top surface of the first grid pattern is located at a first level, a top surface of the light-shield pattern is located at a second level, the first level is lower than the second level, and the first and second levels are defined with respect to the first surface of the semiconductor layer.

Image sensor

Image sensors are provided. The image sensors may include a plurality of unit pixels and a color filter array on the plurality of unit pixels. The color filter array may include a color filter unit including four color filters that are arranged in a two-by-two array, and the color filter unit may include two yellow color filters, a cyan color filter, and one of a red color filter or a green color filter.

Image sensors

An image sensor in which a shading phenomenon is decreased and the quality is increased is provided. The image sensor includes a light-receiving region including a plurality of unit pixels. The image sensor further includes a first region with unit pixels adjacent to a center of the light-receiving region, and a second region with the unit pixels spaced apart from the center of the light-receiving region. In both regions, a plurality of color filters corresponding to the plurality of unit pixels is disposed on a first face of the substrate, as well as a grid pattern interposed between the plurality of color filters defining boundaries between the unit pixels. A width of the grid pattern in the second region is greater than a width of the grid pattern in the first region, thereby adjusting light receiving areas near the edge of the image sensor to correct for a shading phenomenon.

Image sensor with varying grid width

An image sensor includes a semiconductor layer including a first section and a second section, the semiconductor layer having a first surface and a second surface that face each other; a device isolation layer in the semiconductor layer and defining a plurality of pixels; a first grid pattern on the first surface of the semiconductor layer over the first section; and a light-shield pattern on the first surface of the semiconductor layer over the second section. A top surface of the first grid pattern is located at a first level, a top surface of the light-shield pattern is located at a second level, the first level is lower than the second level, and the first and second levels are defined with respect to the first surface of the semiconductor layer.

Optical sensors including a light-impeding pattern are provided. The optical sensors may include a plurality of photoelectric conversion regions, a plurality of lenses on the plurality of photoelectric conversion regions, and a light-impeding layer extending between the plurality of photoelectric conversion regions and the plurality of lenses. The light-impeding layer may include an opening between a first one of the plurality of photoelectric conversion regions and a first one of the plurality of lenses. The optical sensors may be configured to be assembled with a display panel such that the plurality of lenses are disposed between the light-impeding layer and the display panel.

Optical sensors including a light-impeding pattern

An electronic device may include a photoelectric element, a shielding layer on the photoelectric element, and a color filter structure on the shielding layer. The shielding layer may define a first opening over the photoelectric element. The color filter structure may define a second opening over the photoelectric element and the first opening. The color filter structure may appear dark from a view facing the color filter structure.

Image sensor and method for fabricating the same

A device includes first patterns, second patterns, and a second sample pattern on a semiconductor substrate. The second patterns are horizontally spaced apart at an equal interval from the second sample pattern. The second sample pattern includes first and second sidewall facing each other, a first point on the first sidewall, and a second point on the second sidewall. The second sample pattern and the most adjacent first pattern in relation to the second sample pattern are spaced apart from each other at a first horizontal distance in a direction parallel to a line connecting the first point and the second point. The first horizontal distance is greater than a second horizontal distance in the direction between one second pattern of the second patterns and a most adjacent first pattern in relation to the one second pattern.

Semiconductor devices and image sensors

An image sensor includes a first region of a substrate having photoelectric conversion elements formed therein, and includes a second region of the substrate outside of the first region. The image sensor includes a plurality of lenses, a plurality of embossing structures, and a protective layer. The lenses are formed over the first region. The embossing structures are formed over the second region, and the embossing structures are separated from each-other. The protective layer is formed over the lenses and the embossing structures that prevent crack propagation.

Image sensor and method of manufacturing the same

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Seoul, South Korea

Jung-Saeng Kim