Avago Technologies General IP (singapore) Pte. Ltd.

Jung-Rin Woo

Young Kwon

Jung Hyun Kim

Sang Hwa Jung

Sung-Hwan Park

Moon Suk Jeon

Jung-Hyun Kim

Moon-Suk Jeon

Il Do Jung

A power amplifying apparatus includes a radio frequency (RF) power amplifier, a supply modulating unit, a phase shifting unit, and an envelope shaping unit. The RF power amplifier receives an input RF signal and outputs an amplified RF signal. The supply modulating unit provides the RF power amplifier with a supply voltage which varies with an original envelope of the input RF signal. The phase shifting unit receives a control signal and shifts a phase of the input RF signal to be inputted to the RF power amplifier by a shift amount which varies with the control signal. The envelope shaping unit receives the original envelope and provides the phase shifting unit with the control signal which varies with the original envelope.

Power amplifying apparatus

A power amplifier circuit for amplifying an envelope modulated Radio Frequency (RF) signal with improved linearity and efficiency includes a power amplifier, and a variable load matching circuit coupled to an output port of the power amplifier. The input impedance of the variable load matching circuit is changed such that an output power of the power amplifier is at a first output power level, or a second output power level which is higher than the first output power level.

Pulsed dynamic load modulation power amplifier circuit

A power amplifier including a MOSFET including a source supplied with a first DC power, a gate connected to an RF input signal, and a drain connected to a power supply terminal of an RF power amplification unit; a supply voltage modulation control unit that determines a DC gate voltage of the MOSFET based on an envelope of the RF input signal; and a bypass circuit connected between the drain and the power supply terminal. The MOSFET outputs a second DC power via the drain and amplifies the RF input signal based on a third DC power substantially identical to a differential between the first and the second DC power, and also outputs an RF power via the drain. The bypass circuit receives and rectifies the RF power to supply a recycled DC power to the power supply terminal of the RF power amplification unit.

Power amplifier

A power amplifier includes first and second amplification stages. The first amplification stage is configured to amplify a radio frequency (RF) input signal. The second amplification stage includes at least one transistor configured to amplify an output of the first amplification stage, the second amplification stage being configured to have a capacitance between a gate of the at least one transistor and a first power supply voltage. The capacitance automatically varies with amplitude of the output of the first amplification stage.

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Seoul, South Korea

Jung-Rin Woo