Samsung Display Co., Ltd.

Jung Ouck Ahn

Ki-Won Kim

Jin-Won Lee

Kap Soo Yoon

Woo Geun Lee

Seung Sok Son

Si Jin Kim

Se-Myung Kwon

A thin film transistor array panel includes: a substrate; a gate line and a common voltage line electrically separated from each other and elongated parallel with each other on the substrate; a gate insulating layer on the gate line and the common voltage line; a first passivation layer on the gate insulating layer; a common electrode on the first passivation layer; a second passivation layer on the common electrode; and a pixel electrode and a connection member on the second passivation layer and electrically separated from each other. The connection member is elongated in a horizontal direction parallel with the gate line and connects the common voltage line and the common electrode to each other.

Thin film transistor array panel and manufacturing method thereof

A method for manufacturing a thin film transistor array panel includes forming a gate line and a gate electrode protruding from the gate line on a substrate; forming a gate insulating layer on the gate line and the gate electrode; depositing sequentially a semiconductor material and a metal material on the gate insulating layer; performing a first etching operation on the semiconductor material and the metal material using a first mask to form a semiconductor layer and a metal layer, the metal layer including a data line, a source electrode, and a drain electrode, in which the drain electrode protrudes from the data line, and the source electrode and the drain electrode having an integral shape; and performing a second etching operation on the metal layer using a second mask to divide the source electrode and the drain electrode.

Thin film transistor display panel and manufacturing method thereof

Growing community of inventors

Cheonan-si, South Korea

Jung Ouck Ahn