Skhynix Inc.

Jung Myoung Shim

Dong Sun Sheen

Won Joon Choi

Young Ho Yang

Min Sung Ko

Jong Gi Kim

Woo Jae Chung

Kwang Wook Lee

Kyeong Bae Kim

Hyeng Woo Eom

Tae Kyung Kim

Sung Soon Kim

Myung Kyu Ahn

Woo Duck Jung

The method of manufacturing a semiconductor device include: forming conductive patterns in interlayer spaces between interlayer insulating layers, the conductive patterns being separated from each other by a slit passing through the interlayer insulating layers, wherein the conductive patterns include a first by-product; generating a second by-product of a gas phase by reacting the first by-product remaining in the conductive patterns with source gas; and performing an out-gassing process to remove the second by-product.

Method of manufacturing semiconductor device

Method of manufacturing semiconductor device through by-product removal from conductive layer

The present disclosure relates to a semiconductor memory, device and a method of forming a semiconductor memory device. The method of manufacturing a semiconductor memory device, includes forming a tunnel insulation layer and a floating gate on a semiconductor substrate of an active region, forming a trench in the semiconductor substrate of an isolation region, forming, in the trench, a sacrificial layer having an upper surface positioned higher than a surface of the semiconductor substrate, forming a capping layer over the sacrificial layer, and forming an air gap by removing the sacrificial layer without removing the capping layer.

Semiconductor memory device and manufacturing method thereof

Growing community of inventors

Gyeonggi-do, South Korea

Jung Myoung Shim