Hyundai Electronics Industries Co. Ltd.

Boe Hydis Technology Co., Ltd.

Hyundai Display Technology Inc.

Jung Mok Jun

Deuk Su Lee

Yong Kim

Seok Lyul Lee

Jung Yeal Lee

Bong Yeol Ryu

The present invention discloses a photo mask employing in a TFT-LCD fabrication using 4-mask process. The disclosed photo mask comprises a transparent substrate and a shielding pattern formed thereon, wherein the shielding pattern includes a pair of first shielding patterns each having the rectangular shape disposed with separation to cover source and drain formation regions, a pair of second shielding patterns of a bar type disposed between the first shielding patterns and third shielding patterns of a bar type disposed on lower and upper portions of the first and the second shielding patterns to make a clear division between a light transmittance region and a light shielding region on the edge of a channel region.

Photo mask for fabricating a thin film transistor liquid crystal display

Method for manufacturing thin film transistor liquid crystal display

Disclosed is a method for manufacturing a thin film transistor LCD device, in which a counter and a gate bus line are made in a single photolithography process, and a channel of a thin film transistor, a source electrode, a drain electrode, ohmic contacts for the source and drain electrodes are made in a single photolithography process. The method involves the steps of forming a first photoresist layer on said deposited metal layer for the gate bus line; exposing said first photoresist layer to a scanning light, so that the portion of the first photoresist layer disposed over a counter electrode region for forming said counter electrode may be partially lightened; patterning said first photoresist layer so that an area of the metal layer for the gate bus line lying under the partially lightened portion of the first photoresist layer may not be exposed; patterning said metal layer for the gate bus line by using said patterned first photoresist layer as a barrier layer so that said counter electrode region and a gate bus line region may be defined; patterning said transparent conductive layer for the counter electrode by using said patterned metal layer as a barrier layer so that said counter electrode may be formed; patterning said metal layer for the gate bus line by using said patterned first photoresist layer as a barrier layer so that said gate bus line may be formed.

Method for manufacturing TFT LCD device

A method of manufacturing liquid crystal display (LCD), comprising the steps of: forming a bottom indium tin oxide (ITO) in a pixel area of a transparent insulating substrate; forming a gate line and a storage line spaced with each other, the storage line including a first part having a first width and a second part having a second width, the second part is formed in the central portion of the pixel region and the first part is formed in the both sides of the second part and is directly contacted with the bottom ITO; depositing a gate insulating layer over the entire surface of the substrate; forming a semiconductor layer on the gate insulating layer over the gate line; forming a data line being in perpendicular to the gate line, source and drain electrodes being overlapped with both side portions of the semiconductor layer and a conductive pattern being disposed over the second part of the storage line; depositing an organic insulating layer having lower dielectric constant on the entire surface of the substrate by a spin coating method; etching the organic insulating layer to form a contact hole so as to expose the conductive pattern; forming a top ITO on the organic insulating layer over the entire pixel area to be overlapped with portions of the gate line and the data line, the top ITO being in contact with the conductive pattern through the contact hole.

Method of manufacturing liquid crystal display

Growing community of inventors

Seoul, South Korea

Jung Mok Jun