Samsung Electronics Co., Ltd.

Jung-Mo Sung

Jong-Woo Sun

Je-Woo Han

Jin-Young Park

Jung-Pyo Hong

Chan-Hoon Park

Seung-Yoon Song

In a plasma processing method, a substrate is loaded onto a lower electrode within a chamber. A plasma power is applied to form plasma within the chamber. A voltage function of a nonsinusoidal wave having a DC pulse portion and a ramp portion is generated. Generating the voltage function may include setting a slope of the ramp portion and setting a duration ratio of the ramp portion to a cycle of the voltage function in order to control an ion energy distribution generated at a surface of the substrate. A bias power of the nonsinusoidal wave is applied to the lower electrode.

Plasma processing method, plasma processing apparatus and method of manufacturing semiconductor device using the apparatus

A plasma processing apparatus includes a process chamber having an inner space, an electrostatic chuck in the process chamber and to which a substrate is mounted, a gas injection unit to inject a process gas into the process chamber at a side of the process chamber, a plasma applying unit to transform the process gas injected into the process chamber into plasma, and a plasma adjusting unit disposed around the electrostatic chuck and operative to adjust the density of the plasma across the substrate.

Plasma processing apparatus and method of manufacturing semiconductor device using the same

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Seoul, South Korea

Jung-Mo Sung