Samsung Electronics Co., Ltd.

Soulbrain Co., Ltd.

Dongwoo Fine-chem

Semes Co., Ltd.

Pukyong National University

Enf Technology Co., Ltd.

Jung-Min Oh

Hyo-San Lee

Kun-Tack Lee

Hyosan Lee

Kuntack Lee

Woo-Gwan Shim

Yong-Jhin Cho

Young-Hoo Kim

Jeong-Nam Han

Ji-Hoon Jeong

Chang-ki Hong

Yongsun Ko

Jihoon Jeong

Im-Soo Park

Dae-Hyuk Kang

Yong-Sun Ko

Chang-Ki Hong

Ingi Kim

In-Gi Kim

Bo-un Yoon

Sang-tae Kim

Soojin Kim

Ji-Hoon Cha

Ji-Eun Lee

Sang-jun Choi

Donghyun Kim

Myung Ho Lee

Ki-chul Kim

Jong-Won Lee

Jae Sung Lee

Han-Mei Choi

Min Hee Cho

Boun Yoon

Seokhoon Kim

Yongmyung Jun

Kyoungseob Kim

SeokHoon Kim

Yungjun Kim

Mihyun Park

Kwon-Taek Lim

Ha-Soo Hwang

Haldorai Yuvaraj

Jae-Mok Jung

Kyoung Hwan Kim

Kyong-ho Lee

Seong-min Kim

Mi-Hyun Park

Na-Rim Kim

Ui-soon Park

Bong-jin Kuh

Yongtae Kim

Jung Hun Lim

Sung-Il Cho

Jung-Won Lee

Kun-tack Lee

Je-Woo Han

Seok-Hoon Kim

Gyung-Jin Min

Hayoung Jeon

Tae-Hong Kim

Jong-sung Lim

Sang-yong Kim

Dong-Gyun Han

Jun-ho Yoon

Sang-Ryol Yang

Kwangsu Kim

Junghun Lim

Wonho Jang

Sang-Yoon Woo

Ji Soo Jeong

Hyo San Lee

Hyo-Sun Lee

Sol Han

Ye Rim Yeon

Haksoo Kim

Tae-Jin Park

Tae Keun Kim

Yong-Myung Jun

Chae Lyoung Kim

Sang-won Bae

Yong-Moon Jang

Changsu Jeon

Sang-Won Bae

Mi Hyun Park

Subin Oh

Young-Sub Yoo

Jung Jae Oh

Hae Rim Oh

Seungmin Jeon

A process chamber and a substrate processing apparatus including the same are disclosed. The process chamber includes a first housing and a second housing on the first housing. The first housing includes a first outer wall, a first partition wall facing the first outer wall, and a first side wall connecting the first outer wall and the first partition wall. The second housing includes a second outer wall, a second partition wall between the second outer wall and the first partition wall, and a second side wall connecting the second outer wall and the second partition wall. Each of the first and second outer walls has a thickness greater than a thickness of the first partition wall and a thickness of the second partition wall.

Process chamber and substrate processing apparatus including the same

An etching composition and a method of manufacturing a semiconductor device, the composition including 5 wt % to 30 wt % of an oxidizing agent, based on a total weight of the etching composition; a salt including an anion including a carboxylate moiety having 1 to 5 carbon atoms, and an ammonium cation; and a chelating agent including a phosphonic acid having 1 to 8 carbon atoms.

Etching composition and method for manufacturing semiconductor device using the same

A method of processing substrates, comprising: loading a substrate into a process chamber; supplying a supercritical fluid, that is a process fluid under the supercritical state, into the process chamber, chemicals separated from the substrate and the supercritical fluid being mixed into a supercritical mixture in the process chamber; and gradually decreasing a chemical concentration of the supercritical mixture by alternately repeating a pressure drop mode and a supplemental mode such that the supercritical mixture partially flows out from the process chamber at the pressure drop mode when an inner pressure of the process chamber reaches a first pressure and the supercritical fluid turbulently flows into the process chamber at the supplemental mode when the inner pressure of the process chamber reaches a second pressure that is smaller than the first pressure and over a supercritical pressure of the process fluid.

Method of removing chemicals from a substrate

A cleaning composition, a cleaning apparatus, and a method of fabricating a semiconductor device, the cleaning composition including a surfactant; deionized water; and an organic compound, wherein the surfactant is included in the cleaning composition in a concentration of about 0.28 M to about 0.39 M or a mole fraction of about 0.01 to about 0.017, and wherein the organic compound is included in the cleaning composition in a concentration of about 7.1 M to about 7.5 M or a mole fraction of about 0.27 to about 0.35.

Cleaning composition, cleaning apparatus, and method of fabricating semiconductor device using the same

Provided are an etching composition and a method for manufacturing a semiconductor device using the same. According to embodiments, the etching composition may comprise from about 15 wt % to about 75 wt % of peracetic acid; a fluorine compound; an amine compound; and an organic solvent.

A pre-treatment composition for use before etching SiGe includes an acid, an alcohol, and a silane compound having a chemical formula R&#x2014;Si(R)(OR)in which R is (C3-C20)alkyl, (C6-C12)aryl, (C6-C12)aryl(C3-C20)alkyl, or (C3-C20)alkyl(C6-C12)aryl, Ris hydrogen, hydroxyl, halogen, (C1-C20)alkyl, halo(C1-C20)alkyl, (C6-C12)aryl, (C6-C12)aryl(C1-C20)alkyl, or (C1-C20)alkyl(C6-C12)aryl, Ris hydrogen, (C1-C20)alkyl, halo(C1-C20)alkyl, (C6-C12)aryl, (C6-C12)aryl(C1-C20)alkyl, or (C1-C20)alkyl(C6-C12)aryl, n is an integer of 0 to 2, and the alkyl, aryl, arylalkyl, or alkylaryl of R, and the alkyl, haloalkyl, aryl, arylalkyl, or alkylaryl of Rmay be further substituted with at least one substituent selected from halogen, hydroxyl, &#x2014;N(R)(R), and &#x2014;S(R), where each of the R, the Rand the Ris independently hydrogen or (C1-C20)alkyl.

Pre-treatment composition before etching SiGe and method of fabricating semiconductor device using the same

A composition for removing photoresist, including an alkyl ammonium fluoride salt in an amount ranging from about 0.5 weight percent to about 10 weight percent, based on a total weight of the composition; an organic sulfonic acid in an amount ranging from about 1 weight percent to about 20 weight percent, based on the total weight of the composition; and a lactone-based solvent in an amount ranging from about 70 weight percent to about 98.5 weight percent, based on the total weight of the composition.

Compositions for removing photoresist

A method of processing substrates, comprising: loading a substrate into a process chamber; supplying a supercritical fluid, that is a process fluid under a supercritical state, into the process chamber, chemicals separated from the substrate and the supercritical fluid being mixed into a supercritical mixture in the process chamber; and gradually decreasing a chemical concentration of the supercritical mixture by alternately repeating a pressure drop mode and a supplemental mode such that the supercritical mixture partially flows out from the process chamber at the pressure drop mode when an inner pressure of the process chamber reaches a first pressure and the supercritical fluid turbulently flows into the process chamber at the supplemental mode when the inner pressure of the process chamber reaches a second pressure that is smaller than the first pressure and over a supercritical pressure of the process fluid.

Method of treating substrates using supercritical fluids

A source supplier includes a source reservoir that contains a liquefied source fluid for a supercritical process, a vaporizer that vaporizes the liquefied source fluid into a gaseous source fluid under high pressure, a purifier that removes organic impurities and moistures from the gaseous source fluid and an analyzer connected to the purifier that analyzes an impurity fraction and a moisture fraction in the gaseous source fluid. Moisture and organic impurities are removed from the source fluid to reduce the moisture concentration of the supercritical fluid in the supercritical process.

Source supplier for a supercritical fluid, substrate processing apparatus having the same

A cleaning apparatus for removing particles from a substrate is provided. The cleaning apparatus includes a first cleaning unit including a first dual nozzle supplying, to a substrate, a first chemical liquid and a first spray including a first liquid dissolving the first chemical liquid, and a second cleaning unit including a second dual nozzle supplying, to the substrate, a second chemical liquid different from the first chemical liquid and a second spray including a second liquid dissolving the second chemical liquid and being the same as the first liquid.

Cleaning apparatus, chemical mechanical polishing system including the same, cleaning method after chemical mechanical polishing, and method of manufacturing semiconductor device including the same

A substrate treating apparatus and a method of treating a substrate, the apparatus including a substrate treater that treats a substrate using a chemical solution, the chemical solution including a phosphoric acid aqueous solution and a silicon compound; and a chemical solution supplier that supplies the chemical solution to the substrate treating unit, wherein the chemical solution supplier includes a concentration measurer that measures concentrations of the chemical solutions, the concentration measurer including a first concentration measurer that measures a water concentration of the chemical solution; and a second concentration measurer that measures a silicon concentration of the chemical solution.

Substrate treating apparatus

Disclosed are an apparatus for treating a substrate and a method of treating substrates. The apparatus includes an inlet valve through which a supercritical fluid flows into the process chamber until an inner pressure of the process chamber reaches a first pressure and a turbulent flow generator turbulently supplementing the supercritical fluid into the process chamber until the inner pressure of the process chamber is recovered to the first pressure. A pressure drop module partially removes a supercritical mixture from the process chamber until the inner pressure of the process chamber is dropped to the second pressure. A pressure drop mode and a supplemental mode may be alternately repeated by the flow controller.

Apparatus for treating substrates using supercritical fluids, substrate treatment system including the same and method of treating substrates using the same

Methods of manufacturing semiconductor devices using a composition for removing photoresist and methods of removing photoresist from a semiconductor substrate

A method of manufacture and fluid supply system for treating a substrate is provided. The fluid supply system for treating a substrate may include a substrate dry part supplying a dry fluid to dry a rinse solution doped on a substrate; a dry fluid separation part retrieving a mixed fluid that the dry fluid and the rinse solution are mixed with each other during a dry process of the substrate from the substrate dry part and separating the dry fluid from the mixed fluid; and a dry fluid supply part resupplying the dry fluid separated from the dry fluid separation part to the substrate dry part.

Manufacturing method and fluid supply system for treating substrate

Growing community of inventors

Incheon, South Korea

Jung-Min Oh