Lg Chem, Ltd

Jung Min Ko

Chan Yeup Chung

Ho Rim Lee

Junghwan Kim

Dae Sung Kim

Sung Soo Lee

Manshik Park

Chang Sun Eun

Kyoung Hoon Kim

Dong Oh Shin

Chanyeup Chung

Jungyu Kim

Horim Lee

A silicon-based molten composition according to an exemplary embodiment is used in a solution growing method for forming a silicon carbide single crystal, includes silicon (Si), yttrium (Y), and iron (Fe), and is expressed in Formula 1.SiYFe  [Formula 1]

Silicon based melting composition and manufacturing method for silicon carbide single crystal using the same

A silicon-based molten composition according to an exemplary embodiment is used for a solution growth method for forming a silicon carbide single crystal, and represented by Formula 1 including silicon (Si), a first metal M1, a second metal M2 and a third metal M3, wherein the first metal M1 is one or more selected from the group consisting of nickel (Ni) and manganese (Mn), the second metal M2 is one or more selected from the group consisting of scandium (Sc) and titanium (Ti), and the third metal M3 is one or more selected from the group consisting of aluminum (Al) and gallium (Ga):SiM1M2M3&#x2003;&#x2003;Formula 1

Silicon-based molten composition and method for manufacturing silicon carbide single crystal using the same

The present disclosure relates to a silicon-based fusion composition used for a solution growth method for forming a silicon carbide single crystal, and represented by the following Formula 1, including silicon, a first metal (M1), scandium (Sc) and aluminum (Al):SiM1ScAl&#x2003;&#x2003;(Formula 1)

Silicon based fusion composition and manufacturing method of silicon carbide single crystal using the same

A silicon-based molten composition according to an exemplary embodiment of the present invention is used in a solution growing method for forming silicon carbide single crystal, and is expressed in Formula 1 including silicon (Si), chromium (Cr), vanadium (V), and aluminum (Al).SiCrVAl&#x2003;&#x2003;[Formula 1]In Formula 1, a is equal to or greater than 0.4 and equal to or less than 0.9, b+c is equal to or greater than 0.1 and equal to or less than 0.6, c/(b+c) is equal to or greater than 0.05 and equal to or less than 0.95, and d is equal to or greater than 0.01 and equal to or less than 0.1.

A tape casting slurry composition for preparing a silicon nitride sintered body is provided. The tape casting slurry composition exhibits a viscosity suitable for tape casting, and thus, can easily control the area and thickness of the prepared green sheet, thereby preparing a large area silicon nitride sintered body having a thickness of a circuit board without post-processing processes such as grinding, and the like. Therefore, according to the present invention, a silicon nitride sintered body can be prepared using low cost raw materials by a simplified process, thereby securing efficiency and economic feasibility of the preparation process.

Tape casting slurry composition for preparing silicon nitride sintered body

Provided is a silicon-based molten composition including silicon, carbon, and a metal in which a solubility parameter (C) defined by Equation (1) below is less than &#x2212;0.37, wherein a SiC single crystal is formed by a solution method:&#x2212;&#x3bc;&#x2003;&#x2003;Equation (1)in Equation (1) above, A is a first energy (A) of a first evaluation lattice including silicon atoms, a carbon atom, and metal atoms in a silicon crystal lattice including metals and carbons, B is a second energy (B) of a second evaluation lattice including silicon atoms and metal atoms in a silicon crystal lattice including metals, &#x3bc;1 is a constant of &#x2212;5.422, and &#x3bc;2 is a constant of &#x2212;9.097.

Silicon-based molten composition and manufacturing method of SiC single crystal using the same

The present invention relates to a silicon-based molten composition for forming a SiC single crystal by a solution method, the composition containing silicon, carbon, and a metal satisfying 0.70&#x2264;Csisol&#x2264;1.510 with respect to a solubility parameter (Csisol) defined by the following Equation (1):Csisol=+&#x3bc;1&#x2212;&#x3bc;2&#x2003;&#x2003;Equation (1)

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Daejeon, South Korea

Jung Min Ko