Samsung Sdi Co., Inc.

Jung Min Choi

Dong Hun Kang

Tae Wan Kim

Jun Young Jang

Kwen Woo Han

Yong Sik Yoo

Ki Wook Hwang

Go Un Kim

Ji Hye Lee

Hyun Jung Kim

Hyung Rang Moon

Youn Jin Cho

Yong Soon Park

Yong Kuk Kim

Sang Ran Koh

Haruki Nojo

Yong Woon Yoon

An etching composition for silicon nitride comprising: a phosphoric acid compound; water; and at least one of a silane compound represented by Formula 1, below, and a reaction product thereof, and an etching method using the same are disclosed, 

Composition for etching silicon nitride film and etching method using same

An etching composition for silicon nitride layers and a method of etching a silicon nitride layer using the composition, the etching composition including an inorganic acid or a salt thereof; a solvent; an acid-modified silica or an acid-modified silicic acid; and a cyclic compound containing four or more nitrogen atoms.

Etching composition for silicon nitride layer and method of etching silicon nitride layer using the same

The present invention relates to an organic film CMP slurry composition for polishing an organic film, which includes at least either of a polar solvent or a non-polar solvent and a metal oxide abrasive, is acidic, and has a carbon content of around 50 to 95 atm %, and a polishing method using the same.

Organic film CMP slurry composition and polishing method using same

The present invention relates to a CMP slurry composition, for an organic film, for polishing an organic film and an organic film polishing method using same, the CMP slurry composition comprising: a polar solvent and/or a non-polar solvent; metal oxide abrasives; an oxidant; and a heterocyclic compound, wherein the heterocyclic compound, as a heteroatom, comprises one or two of oxygen (O) atom, sulfur (S) atom and nitrogen (N) atom and has carbon content of 50-95 atom %.

CMP slurry composition for organic film and polishing method using same

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Uiwang-si, South Korea

Jung Min Choi