Taiwan Semiconductor Manufacturing Comp. Ltd.

Jung-Lung Hung

Yeh-Chieh Wang

Hong-Hsing Chou

Chi-Hao Huang

Jaw-Lih Shih

Rong-June Hsiao

Among other things, one or more systems and techniques for increasing temperature for chemical mechanical polishing (CMP) are provided. For example, a liquid heater component is configured to supply heated liquid to a polishing pad upon which a semiconductor wafer is to be polished, resulting in a heated polishing pad having a heated polishing pad temperature. The increased temperature of the heated polishing pad increases oxidation of the semiconductor wafer, which improves a CMP removal rate of material from the semiconductor wafer due to a decreased oxidation timespan and a stabilization timespan for reaching a stable CMP removal rate during CMP. In this way, the semiconductor wafer is polished utilizing the heated polishing pad, such as by a tungsten CMP process.

Temperature modification for chemical mechanical polishing

A sapphire pad conditioner includes a sapphire substrate having multiple protrusions on a surface and a holder arranged to hold the sapphire substrate. The sapphire substrate is used for conditioning a chemical mechanical planarization (CMP) pad.

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Hsinchu, Taiwan

Jung-Lung Hung