Samsung Electronics Co., Ltd.

Jung-Lim Yoon

Chang-Hun Lee

Jong-hyon Ahn

Jae-Min Yu

Chang-Rok Moon

A method of fabricating split gate type FLASH memory device comprises forming trench device isolation layers in a substrate to define a plurality of parallel first active regions. A gate insulation pattern, a conductive pattern and a hard mask pattern, which are sequentially stacked, are formed to have sidewalls aligned to sidewalls of the trench device isolation layer. Along each of the first active regions, the hard mask pattern is removed at regular intervals to expose a top of the conductive pattern. An oxide pattern is formed on the exposed top of the conductive pattern and the hard mask pattern is removed. Using the oxide pattern as an etch mask, the conductive pattern is etched to form floating gate patterns arranged over each of the first active regions at regular intervals. Tunnel oxide layers are formed on sidewalls of the floating gate patterns. A plurality of control gate electrodes are formed to cross over the first active regions. The control gate electrodes are disposed on the floating gate patterns.

Method of fabricating FLASH memory devices

A flip chip type semiconductor device comprises at least one first metal line and at least a pair of second metal lines formed in the passivation layer, an aluminum pad covering the first metal line, an aluminum fuse covering the pair of second metal lines adjacent to each other and the passivation layer therebetween, and an under-bump metal layer pattern and a bump formed on the aluminum pad in order. The first and second metal lines are formed respectively in first and second grooves by using a damascene process after forming first and second grooves in the passivation layer.

Growing community of inventors

Seoul, South Korea

Jung-Lim Yoon