Mitsui Minings & Melting Co., Ltd.

Jung-Lae Jo

Kei Anai

Shinichi Yamauchi

Takahiko Sakaue

Kengo Tashiro

A method is provided for producing a bonding composition containing copper particles and a second liquid medium. In this production method, the copper particles are produced in a first liquid medium using a wet reduction method, and thus a dispersion of the copper particles is prepared. Subsequently, the first liquid medium in the dispersion is ultimately, finally or eventually replaced with the second liquid medium while the dispersion is kept wet. It is also preferable that the first liquid medium is replaced with another liquid medium one or more times, and the second liquid medium is used in the final replacement. The liquid media are preferably replaced at a temperature of lower than 100° C. The second liquid medium preferably includes one or more of water, alcohol, ketone, ester, ether, and hydrocarbon.

Method for producing bonding composition

A composition for pressure bonding contains a metal powder and a solid reducing agent and has a compressibility of 10% to 90%, the compressibility being expressed by a relationship formula using the thickness A of a dried coating film formed by drying the composition in an air atmosphere at 110° C. under atmospheric pressure for 20 minutes and the thickness B of a sintered body formed by treating the dried coating film in a nitrogen atmosphere at 280° C. under a pressure of 6 MPa for 20 minutes. The solid reducing agent may be BIS-TRIS. Also provided is a bonded structure of conductors in which a bonding portion via which two conductors are bonded together is formed by treating, under pressure, the two conductors and a coating film formed of the composition for pressure bonding provided therebetween.

Composition for pressure bonding, and bonded structure of conductive bodies and production method therefor

A bonding material includes: a copper foil; and a sinterable bonding film formed on one surface of the copper foil. The bonding film contains a copper powder and a solid reducing agent. The bonding material is used for bonding to a bonding target having, on its surface, at least one metal selected from the group consisting of gold, silver, copper, nickel, and aluminum. The bonding material is also used as a material for wire bonding. A bonded structure is also provided in which a bonding target having a metal layer formed on its surface and a copper foil are electrically connected to each other via a bonding layer formed of a sintered structure of a copper powder, wherein the metal layer contains at least one metal selected from the group consisting of gold, silver, copper, nickel, and aluminum.

Bonding material and bonded structure

A bonding sheet includes a copper foil and sinterable bonding films formed on both faces of the copper foil. The bonding films each contain copper particles and a solid reducing agent. The bonding sheet is used to bond to a target object to be bonded having at least one metal selected from gold, silver, copper, and nickel on a surface thereof. A bonded structure includes: a bonded object having at least one metal selected from gold, silver, copper, and nickel on a surface thereof; a copper foil; and a bonding layer including a sintered structure of copper particles; and the bonded object and the copper foil are electrically connected to each other via the bonding layer.

Bonding sheet and bonded structure

A bonded body is provided including: a bonding layer containing Cu; and a semiconductor element bonded to the bonding layer. The bonding layer includes an extending portion laterally extending from a peripheral edge of the semiconductor element. In a cross-sectional view in a thickness direction, the extending portion rises from a peripheral edge of a bottom of the semiconductor element or from the vicinity of the peripheral edge of the bottom of the semiconductor element, and includes a side wall substantially spaced apart from a side of the semiconductor element. Preferably, the extending portion does not include any portion where the side wall and the side of the semiconductor element are in contact with each other. A method for manufacturing a bonded body is also provided.

Bonded body and method for manufacturing same

A temporary fixing composition is provided that is used to temporarily fix a first bonding target material and a second bonding target material to each other before the two bonding target materials are bonded to each other. The temporary fixing composition contains a first organic component having a viscosity of less than 70 mPa·s at 25° C. and a boiling point of 200° C. or lower and a second organic component having a viscosity of 70 mPa·s or greater at 25° C. and a boiling point of 210° C. or higher. It is preferable that, when thermogravimetry-differential thermal analysis is performed under the conditions at a temperature increase rate of 10° C./min in a nitrogen atmosphere with a sample mass of 30 mg, the 95% mass reduction temperature is lower than 300° C.

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Ageo, Japan

Jung-Lae Jo