Samsung Display Co., Ltd.

Samsung Electronics Co., Ltd.

Other

Purebio & Tech Inc.

Jung-Kyu Lee

Il-Jeong Lee

Do-Hyun Kwon

Sung-Eun Lee

Min-Jung Lee

Kwang-Young Choi

Sang-ho Park

Sung-il Kim

Seung-Min Lee

Young-lark Koh

Seong-hun Kang

Jeong-Ho Lee

Joo-Sun Yoon

Tae-Hyun Kim

Choong-Youl Im

Yoon-Ho Khang

Ju-Won Yoon

Yong-Su Lee

Su-Hyoung Kang

Se-Hwan Yu

Moo-Soon Ko

Su-Yeon Sim

Wang-Woo Lee

Hyun-Jae Na

Cheol-Kyu Kim

Myung-Jin Kim

Sung-hyeon Park

Byung-Man Lim

Chong-Sup Chang

Kyu-Chul Shin

Chul-Geun Kim

Seung-Hoon Pak

Sung-Guu Kang

Yung-Dal Yoon

Ji-Hyang Kim

Byung-Rok Do

Chae-Up Yoo

Young-Ki Shin

Seung-il Yu

Byong-dong Kim

A transparent display device according to example embodiments includes a substrate having a pixel area and a transmission area, a pixel circuit on the pixel area of the substrate, an insulation structure on the substrate to cover the pixel circuit, a first electrode on the pixel area of the substrate, the first electrode being at least partially penetrated the insulation structure and electrically connected to the pixel circuit, a display layer on the first electrode, a second electrode facing the first electrode and covering the display layer, and an anti-diffraction layer on the substrate, the anti-diffraction layer at least partially overlapping the transmission area and including a plurality of nano wires.

Transparent display device

An electronic device including an antenna device is provided. The electronic device includes a case member, a frame disposed around a periphery of one surface of the case member, forming sidewalls, and an antenna device for transmitting and receiving wireless signals. The antenna device includes a first radiation conductor forming a first part of the frame, a second radiation conductor disposed in a vicinity of the first radiation conductor, forming a second part of the frame, a third radiation conductor provided on the case member and connected to a first power supply of the electronic device, together with the first radiation conductor, and a fourth radiation conductor provided on the case member and connected to a ground of the electronic device. At least a part of the fourth radiation conductor is disposed in a vicinity of the second radiation conductor.

Electronic device including antenna device

A thin film transistor substrate includes a semiconductor pattern on a base substrate, a first insulation member disposed on the semiconductor pattern, a second insulation pattern disposed on the first insulation member, and a gate electrode disposed on the first insulation member and the second insulation pattern. The second insulation pattern overlaps a first end portion of the semiconductor pattern, and exposes a second end portion of the semiconductor pattern opposite to the first end portion. The gate electrode overlaps both the first insulation member and the second insulation pattern.

Thin film transistor substrate, display device having the same and method of manufacturing the same

Provided is a regenerative cell extraction system. The regenerative cell extraction system includes: a regenerative cell separation unit which separates fat tissue; and a regenerative cell extraction unit. The regenerative cell separation unit includes: a sub container which is rotated by a torque applied from an external source and includes a space in which fat tissue is housed; a hollow main pipe which is inserted into the sub container; and a pump which is connected to the main pipe. In addition, the regenerative cell extraction unit receives a regenerative cell-containing substance, which is obtained after the fat tissue is centrifuged by the regenerative cell separation unit, from the regenerative cell separation unit, and extracts regenerative cells from the substance by centrifuging the substance. The regenerative cell extraction unit includes: a main container which is rotated by a torque applied from an external source; a hollow first discharge pipe which is inserted into the main container; and a suction device which is connected to the first discharge pipe; and a plurality of protruding housing portions which bulge outwards along a radius direction with respect to a center of rotation of the main container to accommodate relatively heavy components among components separated from the substance.

Regenerative cell extraction unit and regenerative cell extraction system

A thin film transistor (TFT) includes a semiconductor active layer, a gate electrode, a source electrode, and a drain electrode. The semiconductor active layer includes a first doped region as a source region, a second doped region as a drain region, an undoped region between the first and second doped regions. A third doped region is disposed between the second doped region and the undoped region. The gate electrode is insulated from the semiconductor active layer and overlaps the third doped region and the undoped region. The source electrode and the drain electrode are connected to the first and second doped regions.

Thin film transistor and manufacturing method thereof

A method of manufacturing a thin film transistor (TFT) array substrate is disclosed. In one aspect, the method includes forming an active layer on a substrate, forming a first insulating layer on the substrate to cover the active layer, and forming a first gate electrode on the first insulating layer in an area corresponding to the active layer, doping the active layer with ion impurities, forming a second insulating layer on the first insulating layer to cover the first gate electrode, performing an annealing process on the active layer, forming a lower electrode of a capacitor on the second insulating layer, forming a third insulating layer on the second insulating layer to cover the lower electrode, wherein the third insulating layer has a dielectric constant that is greater than those of the first and second insulating layers, and forming an upper electrode of the capacitor on the third insulating layer.

Thin-film transistor array substrate, display device including the same, and method of manufacturing the thin-film transistor array substrate

A display device includes a substrate, an active layer, a gate insulation layer, a gate electrode, an interlayer insulation layer, a clad layer, a source electrode, and a drain electrode. The active layer is disposed on the substrate. The gate insulation layer is disposed on the active layer. The gate electrode is disposed on the gate insulation layer. The interlayer insulation layer is disposed on the gate electrode. A dielectric constant of the interlayer insulation layer is less than a dielectric constant of the gate insulation layer. The clad layer is disposed on the interlayer insulation layer. The source and drain electrodes are disposed on the clad layer.

Display device and method of manufacturing the same

Thin film transistor substrate and display device having the same

A display substrate includes a base substrate, a switching element, a gate line, a data line and a pixel electrode. Each of the gate line and the data line includes a first metal layer, and a second metal layer directly on the first metal layer. The switching element is on the base substrate, and includes a control electrode and an input electrode or an output electrode. The control electrode includes the first metal layer and excludes the second metal layer, and extends from the gate line. The input electrode or the output electrode includes a second metal layer and excludes the first metal layer. The input electrode extends from the data line. The pixel electrode is electrically connected to the output electrode of the switching element through a first contact hole, and includes a transparent conductive layer.

Display substrate and method of manufacturing the same

A round heating plate for a heating chamber used in semiconductor device manufacturing provides uniform heating of the wafer from its center to its outside edges. The round heating plate includes a small-diameter round heating element and multiple ring-shaped elements arranged concentrically therewith. The round heating plate has the same shape as the wafer, and in the heating chamber, a pair of round heating plates is arranged so as to be concentric with a pair of wafers to be heated. During heating, the wafers are installed in a space formed between the heating plates.

Round heating plate used in a heating chamber for semiconductor device manufacturing

A method of forming an integrated circuit capacitor includes the steps of forming an insulating layer on an integrated circuit substrate, and forming a conductive layer on the insulating layer opposite the integrated circuit substrate. A patterned ozone tetraethylorthosilicate undoped silicate layer is formed on the conductive layer, and conductive spacers are formed along sidewalls of the ozone tetraethylorthosilicate undoped silicate layer. A dielectric layer is formed on the conductive spacers and on the first conductive layer, and a second conductive layer is formed on the dielectric layer opposite the first conductive layer in the conductive spacers.

Methods of forming three-dimensional capacitor structures including ozone tetraethylorthosilicate undoped silicate

of A method of forming a dielectric layer includes the steps of forming an electrode on a microelectronic substrate, and forming depressions and protrusions on exposed portions of the electrode thereby increasing a surface area thereof. An exposed portion of the electrode including the depressions and protrusions is nitrified, and the electrode is not exposed to oxygen during and between the steps of forming the depressions and protrusions and nitrifying the exposed portion of the electrode. A nitride layer is then formed on a nitrified electrode. Related structures are also discussed.

Methods of forming nitride dielectric layers having reduced exposure to

A dry etching method and apparatus improves the uniformity of etching a wafer in the manufacture of a semiconductor device. The dry etching apparatus has a susceptor supporting the wafer, a cooling system installed in the susceptor, an upper RF (radio frequency) electrode which may incorporate a gas diffuser for spraying reactive gas toward the wafer, and an RF power source for producing an electric field used to react the gas and generate plasma. The gap between the upper RF electrode and the susceptor is configured to accommodate for distortions in the wafer or other processing requirements. In addition, the nozzles of the gas diffuser can be configured to spray different amounts of gas to also enhance the etching uniformity. Finally, one of the electrodes may be divided into concentric sections. In this case, the RF power source can generate electric fields of different intensities at the sections. When the divided electrode is the susceptor, the cooling system cools the sections to different temperatures to in turn temperature-condition the wafer in a manner determined in advance to enhance the uniformity of the etching process.

Dry etching method and apparatus for manufacturing a semiconductor device

A developing solution feed system for a semiconductor photolithography process feeds the developing solution while removing any gas contained in the solution at a high solution feed pressure. The developing solution feed system has a plurality of feed tanks and a developing solution feed line having a plurality of first connecting pipes, each connected to the feed tanks, a second connecting pipe connected to the first connecting pipe to be converged into one passage, and a plurality of third connecting pipes branching out from the second connecting pipe. The system also contains nozzles connected to the third connecting pipes to thereby sputter the developing solution onto wafers each located in process chambers, a gas removal device installed in the one passage of the second connecting pipe to thereby remove gas contained in the developing solution, and shut off valves, each installed in the third connecting pipes to thereby open and close passages, so that the developing solution can selectively be fed into only one process chamber at a time through the third connecting pipes.

Developing solution feed system for semiconductor photolithography

Growing community of inventors

Seoul, South Korea

Jung-Kyu Lee