Samsung Electronics Co., Ltd.

Jung-Kyu Jung

Taeyon Lee

Yoondong Park

HyunSeok Lee

Tae-Yon Lee

Gwi-Deok Ryan Lee

Sang-Chul Sul

Myung-won Lee

A photodetector may have a structure including conductive patterns and an intermediate layer interposed between the conductive patterns. A length L of at least one side of the second conductive pattern that overlaps the first conductive pattern and the intermediate layer satisfies the equation L=&#x3bb;/2n, wherein the nis an effective refractive index of a surface plasmon waveguide formed of the first conductive pattern, the intermediate layer, and the second conductive pattern during a surface plasmon resonance. Heat generated in the intermediate layer when the electromagnetic wave having the wavelength &#x3bb; is incident thereon generates a current variation.

Photodetector and image sensor including the same

An image sensor includes a semiconductor layer, an organic photoelectric conversion portion disposed on an upper surface of the semiconductor layer and that converts a color component of incident light into a corresponding electrical signal, a transistor layer disposed on a lower surface of the semiconductor layer and including a pixel circuit that receives the electrical signal, and penetration wiring that laterally penetrates a side surface of the semiconductor layer between the upper and lower surfaces and that electrically connects the organic photoelectric conversion portion with the pixel circuit to communicate the electrical signal.

Image sensor and image processing device

Growing community of inventors

Seoul, South Korea

Jung-Kyu Jung