Other

Electronics and Telecommunications Research Institute

Cj Cheiljedang Corporation

Korea Telecom

Korea Institute of Science and Technology

Sogang University Research Foundation

Jung Kee Lee

Kyung Hyun Park

Dong Hoon Jang

Chul Soon Park

Tae Kwang Oh

Ho Sung Cho

Young Ok Kim

Yong Uk Shin

Eun Soo Nam

Jun Ok Moon

Hyung Joon Kim

Young Hoon Park

Dong Kyu Lee

Hyo Seok Kim

Kwang Woo Lee

Kyungrim Kim

Hyo Jeong Byun

Kyu-Ho Lee

Hyun Min Koo

Seong Jun Kim

Yu Ra Kim

Young Seo Park

Yang Woong Choi

Hyung Kwon Kim

Kyung Suk Bae

Dong Kyoo Lee

Seung Chun Park

Hyung Kwoun Kim

Kyung-Jo Lee

Sun-Shin Cha

Young Hoon 102-705 Mugigae Maeul Life Apt Park

Jun Ok 101-1403 Deungchon 2-Cha Boram Apt Moon

The present disclosure relates to a microorganism for producing an L-amino acid with enhanced activity of &#x3b1;-glucosidase and a method for producing an L-amino acid using the same. According to the present disclosure, the microorganism of the genusproducing an L-amino acid has enhanced activity of &#x3b1;-glucosidase, thereby improving L-amino acid production yield. Therefore, the microorganism may be very usefully used for L-amino acid production.

Microorganism for producing L-amino acid with enhanced activity of &#x3b1;-glucosidase and method for producing L-amino acid using the same

The present application relates to a strain expressing the FrsA protein, and a method for producing ethanol using the same. The FrsA of the present application has a high PDC enzyme activity for a pyruvate, which is a substrate, and thus can be used in a process for producing ethanol. In addition, an FrsA mutant having improved stability in a host cell can be more effective in producing ethanol due to the increase in stability when the FrsA mutant is overexpressed together with IIA, compared with when using conventional-derived PDC.

Strain expressing FRSA and method for producing ethanol using same

Disclosed is a novel L-lysine-inducible promoter nucleic acid molecule. Also disclosed are a vector containing the nucleic acid molecule, a host cell transformed with the vector, and a method of inducing expression of a target gene using the L-lysine-inducible promoter nucleic acid molecule.

L-lysine-inducible promoter

A 0.98 &mgr;m semiconductor laser of a ridge waveguide (RWG) structure includes: to be lengthen the durability of a semiconductor laser by increasing a catastrophic optical damage (COD) level, a ridge having a fixed width and length so that the strip may stop in the position of 30 &mgr;m on the basic of end portion of an output facet along length direction of a resonator; and a non-waveguide region in the end portion of both sides of a resonator.

Fabrication of high power semiconductor lasers with ridge waveguide structure

High power semiconductor lasers with ridge waveguide structure

This invention relates to a strain of,JM83/pKP2 transformed by a plasmid and phytase produced therefrom, and more particularly, to the strain,JM83/pKP2 transformed with a recombinant vector pKP1 or pKP2, so prepared by gene manipulation.

Strain E. coli JM83/pKP2 transformed with a recombi plasmid and phytase produced therefrom

The strain Bacillus sp. DS11 (KCTC 0231BP) is disclosed and a phytase produced by DS11 having the following characteristics: optimum temperature: 65&deg; C.; optimum pH: 7.0; molecular weight: 43,000 dalton; isoelectric point: 5.6; and a specified N-terminal amino acid sequence. The bacterial strain DS11 or the phytase it produces can be used as an animal feed additive.

DS11 (KCTC 0231BP), novel Bacillus sp. strain and novel phytase produced by it

A method of fabricating a semiconductor laser comprises the steps of sequentially depositing a lower cladding layer, an active layer, a first upper cladding layer, an etching stop layer, a second upper cladding layer and an ohmic contact layer over a compound semiconductor substrate, forming an etching mask over the ohmic contact layer so as to expose channel regions and to shield the ridge regions between the channel regions, performing wet etching to etch the ohmic contact layer and the second upper cladding layer so as to expose the etching stop layer so as to form the channels and the ridges having narrower widths than the parts of the etching mask shielding the ridge regions, and implanting dopant ions into the parts of the first upper cladding layer and the active layer below the channels to form ion-implanted regions by using the etching mask as the ion implantation mask.

Method of fabricating a high power semiconductor laser with self-aligned

The present invention relates to high power semiconductor laser device and method for fabricating the same utilizing ion implanting process, by which a beam steering phenomenon of an optical output due to filaments is eliminated. This elimination is achieved by a periodically varying gain given for a resonator of the semiconductor laser device. That is, this invention changes a gain distribution which causes the generation of filaments in the resonator into different distribution. According to the present invention, there is formed an insulation layer through ion implantation to an active layer to adjust current density implanted to the active layer, thereby eliminating non-uniform distribution of the light along the longitudinal direction of the resonator.

High power semiconductor laser device and method for fabricating the same

Growing community of inventors

Daejeon, South Korea

Jung Kee Lee