Rohm and Haas Electronic Materials Korea Ltd.

Rohm & Haas Electronic Materials LLC

Jung-June Lee

Jae-Bong Lim

Eui-Hyun Ryu

Jin Hong Park

Shintaro Yamada

Sung Wook Cho

Jae Hwan Sim

Eui Hyun Ryu

Myung-Yeol Kim

You Rim Shin

Myung Yeol Kim

Seon-Hwa Han

Hae-Kwang Pyun

Jae-Yun Ahn

Jae-Hwan Sim

Emad Aqad

Matthew Lee Grandbois

Jin-Hong Park

Dong-Yong Kim

Chang-Young Hong

Min-Kyung Jang

Min Kyung Jang

Hae-Jin Lim

Jae Bong Lim

EunHye Cho

Jun-Han Yun

Jae Yun Ahn

Dong Je Hong

Ohk-Min Jeon

Ji-Hoon Kang

You-Rim Shin

Ji-Hon Kang

Organic coating compositions, particularly antireflective coating compositions for use with an overcoated photoresist, are provided that in a first aspect comprise a crosslinker component that comprises a structure of the following Formula (I):

Coating compositions for use with an overcoated photoresist

New composition and methods are provided that include antireflective compositions that can exhibit enhanced etch rates in standard plasma etchants. Preferred antireflective coating compositions of the invention have decreased carbon content relative to prior compositions.

Underlying coating compositions for use with photoresists

Organic coating compositions, particularly antireflective coating compositions for use with an overcoated photoresist, are provided that comprise that comprise a thermal acid generator that comprises: i) a pyridinium component having one or more ring substituents selected from optionally substituted alkyl and optionally substituted heteroalkyl; and ii) a sulfonic acid component.

An antireflective coating composition, including a polymer, a photoacid generator having a crosslinkable group, a compound capable of crosslinking the polymer and the photoacid generator, a thermal acid generator, and an organic solvent.

Method for forming pattern using antireflective coating composition including photoacid generator

Organic coating compositions, particularly antireflective coating compositions for use with an overcoated photoresist, are provided that comprise that comprise a crosslinker component that comprises a structure of the following Formula (I): 

Coating composition for use with an overcoated photoresist

New methods and substrates are provided that include antireflective compositions that comprise one or more thermal acid generators.

Antireflective compositions with thermal acid generators

Polymeric reaction products of certain aromatic alcohols with certain diaryl-substituted aliphatic alcohols are useful as underlayers in semiconductor manufacturing processes.

Aromatic resins for underlayers

New photobase generators suitable for use in photoresists are provided that correspond to Formula (I):X&#x2014;R&#x2014;O&#x2014;C(&#x2550;O)N(R)R&#x2003;&#x2003;(I)wherein Xis an optionally substituted aromatic group; Ris a linker; and Rand Rare the same or different optionally substituted linear, branched or cyclic aliphatic group or an optionally substituted aromatic group, wherein at least one of Rand Ris an optionally substituted branched alkyl group having 4 or more carbon atoms.

Photobase generators and photoresist compositions comprising same

Organic coating compositions, particularly antireflective coating compositions for use with an overcoated photoresist, are provided that comprise 1) one or more resins and 2) one or more substituted isocyanurate compounds that are distinct from the 1) one or more resins.

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Chungcheongnam-do, South Korea

Jung-June Lee