Taiwan Semiconductor Manufacturing Comp. Ltd.

Jung-Jui Li

Po-Chi Wu

Yi-Cheng Chao

Chai-Wei Chang

Ya-Lan Chang

Che-Cheng Chang

Buh-Kuan Fang

A method for fabricating a semiconductor component includes forming an interlayer dielectric (ILD) layer on a substrate, forming a trench in the interlayer dielectric layer, forming a metal gate in the trench, removing a portion of the metal gate protruding from the ILD layer, reacting a reducing gas with the metal gate, and removing a top portion of the metal gate.

Method for fabricating metal gate devices and resulting structures

A method for forming a semiconductor device structure is provided. The method includes forming a dielectric layer over a substrate. The dielectric layer has a trench passing through the dielectric layer. The method includes forming a gate stack in the trench. The method includes performing a hydrogen-containing plasma process over the gate stack. The method includes removing a top portion of the gate stack to form a first recess surrounded by the gate stack and the dielectric layer. The method includes forming a cap layer in the first recess to fill the first recess.

Semiconductor device structure and method for forming the same

A fin field effect transistor (FinFET) device structure is provided. The FinFET structure includes a substrate, and the substrate includes a first region and a second region. The FinFET structure includes a first plurality of fin structures formed on the first region and a second plurality of fin structures formed on the second region. A density of the first plurality of fin structures is greater than a density of the second plurality of fin structures. The FinFET structure also includes a plurality of protruding structures between two adjacent second plurality of fin structures in the second region and an isolation structure formed on the substrate. The isolation structure has a gap height between the first plurality of fin structures and the second plurality of fin structures.

Fin field effect transistor (FinFET) device structure and method for forming the same

A method includes forming trenches on a semiconductor substrate, thereby defining regions for forming semiconductor devices; extracting a profile of the regions; determining an etch recipe based on at least the profile of the regions; filling in the trenches with a dielectric material; and performing an etching process to the dielectric material using the etch recipe.

Method of semiconductor fabrication with height control through active region profile

Methods for forming the fin field effect transistor (FinFET) device structure are provided. The method includes forming first fin structures and second fin structures on a first region and a second region of a substrate, respectively, and a number of the first fin structures is greater than a number of the second fin structures. The method also includes forming a sacrificial layer on the first fin structures and the second fin structures and performing an etching process to the sacrificial layer to form an isolation structure on the substrate.

Method for forming Fin field effect transistor (FinFET) device structure

A method of fabricating a semiconductor device is disclosed. A substrate having an oxide layer is provided. At least a portion of the oxide layer is removed and forms a nitride layer. The nitride layer is removed, leaving nitride precipitates. The nitride precipitates are removed using phosphoric acid.

Systems and methods to mitigate nitride precipitates

The present disclosure provides a method for fabricating an integrated circuit in accordance with some embodiments. The method includes forming a trench on a semiconductor substrate, thereby defining fin active regions; extracting a profile of the fin active regions; determining an etch dosage according to the profile of the fin active regions; filling in the trench with a dielectric material; and performing an etching process to the dielectric material using the etch dosage, thereby recessing the dielectric material and defining a fin height of the fin active regions.

A fin field device structure and method for forming the same are provided. The FinFET device structure includes a substrate, and the substrate includes a first region and a second region. The FinFET device structure includes an isolation structure formed on the substrate and first fin structures formed on the first region. The FinFET device structure also includes second fin structures formed on the second region, and the number of the first fin structures is greater than the number of the second fin structures. The first fin structures have a first height, the second fin structures have a second height, and a gap between the first height and the second height is in a range from about 0.4 nm to about 4 nm.

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Hsinchu, Taiwan

Jung-Jui Li