Samsung Electronics Co., Ltd.

Gwangju Institute of Science and Technology

Jung-inn Sohn

Seung-nam Cha

Sung-Min Kim

Sang-Woo Kim

Young-jun Park

Ji-yeon Ku

Ju-seok Seo

June-o Song

Kyoung-kook Kim

Dong-seok Leem

Tae-yeong Seong

A nanogenerator with at least one nanostructure and method of manufacturing the same are provided. The method of manufacturing the nanogenerator includes forming at least one nanostructure including an organic piezoelectric material on a substrate.

Nanogenerator and method of manufacturing the same

A method of controlling a growth crystallographic plane of a metal oxide semiconductor having a wurtzite crystal structure by using a thermal chemical vapor deposition method includes controlling a growth crystallographic plane by allowing the metal oxide semiconductor to grow in a non-polar direction by using a source material including a thermal decomposition material that reduces a surface energy of a polar plane of the metal oxide semiconductor.

Controlled manufacturing method of metal oxide semiconductor and metal oxide semiconductor structure having controlled growth crystallographic plane

A nano-piezoelectric generator includes a first electrode and a second electrode, at least one nano-piezoelectric unit, formed of a semiconductor piezoelectric material having a nano-structure, disposed between the first and the second electrodes, and an interlayer, formed of an insulating material, disposed between the first electrode and the at least one nano-piezoelectric unit.

Nano-piezoelectric generator and method of manufacturing the same

Nano generator and method of manufacturing the same

A ZnSnO/ZnO nanowire, a method of forming a ZnSnO/ZnO nanowire, a nanogenerator including a ZnSnO/ZnO nanowire, a method of forming a ZnSnOnanowire, and a nanogenerator including a ZnSnOnanowire are provided. The ZnSnO/ZnO nanowire includes a core and a shell that surrounds the core, wherein the core includes ZnSnOand the shell includes ZnO.

ZNSNO3/ZNO nanowire having core-shell structure, method of forming ZNSNO3/ZNO nanowire and nanogenerator including ZNSNO3/ZNO nanowire, and method of forming ZNSNO3 nanowire and nanogenerator including ZNSNO3 nanowire

A nanopiezoelectric generator is provided. The nanopiezoelectric generator includes a first electrode; a second electrode; at least one nanostructure that is interposed between the first electrode and the second electrode, and includes a piezoelectric material and first carriers; and a concentration adjusting unit that adjusts a concentration of the first carriers in the at least one nanostructure.

Nanopiezoelectric generator and method of manufacturing the same

A top-emitting nitride-based light-emitting device and a method of manufacturing the same. The top-emitting nitride-based light-emitting device having a substrate, an n-cladding layer, an active layer, and a p-cladding layer sequentially formed includes: a grid cell layer formed on the p-cladding layer by a grid array of separated cells formed from a conducting material with a width of less than 30 micrometers to improve electrical and optical characteristics; a surface protective layer that is formed on the p-cladding layer and covers at least regions between the cells to protect a surface of the p-cladding layer; and a transparent conducting layer formed on the surface protective layer and the grid cell layer using a transparent conducting material. The light-emitting device and the method of manufacturing the same provide an improved ohmic contact to the p-cladding layer, excellent I-V characteristics, and high light transmittance, thus increasing luminous efficiency of the device.

Growing community of inventors

Hwaseong-si, South Korea

Jung-inn Sohn