Taiwan Semiconductor Manufacturing Comp. Ltd.

Jung-I Lin

Chen-Jong Wang

Chia-Shiung Tsai

Yeur-Luen Tu

Jhy-Jyi Sze

Tien-Lu Lin

Jiech-Fun Lu

Tai-I Yang

Ta-Chun Lin

Ching-Chung Su

Hung-Wen Hsu

Dun-Nian Yaung

Alexander Kalnitsky

Yung-Chang Chang

Yimin Huang

Shih-Wei Lin

Yueh-Chuan Lee

Yi-Shin Chu

Kuan-Chieh Huang

Chia-Chan Chen

Seiji Takahashi

Te-Hsien Hsieh

Hsiang-Lin Chen

Yin-Kai Liao

Sin-Yi Jiang

Ren-Jie Lin

Chih-Ho Tai

Bo-Chang Su

Po-Jung Chiang

Shen-Hui Hong

Ta-Hsin Chen

Chih-Huang Li

Chi-Feng Chen

King Liao

The present disclosure relates to an image sensor integrated chip. The image sensor integrated chip includes a photodiode region disposed within a substrate having a first semiconductor material region. A second semiconductor material region is disposed onto the substrate. A patterned doped layer is arranged between the substrate and the second semiconductor material region. The second semiconductor material region includes a sidewall connecting to a bottom surface of the second semiconductor material region. The sidewall extends through the patterned doped layer. A bottom surface of the second semiconductor material region is directly over the photodiode region.

Channel pattern design to improve carrier transfer efficiency

The present disclosure provides a semiconductor structure, including a substrate including a first material, wherein the first material generates electrical signals from radiation within a first range of wavelengths, an image sensor element including a second material, wherein the second material generates electrical signals from radiation within a second range of wavelengths, the second range is different from first range, a transparent layer proximal to a light receiving surface of the image sensor element, wherein the transparent layer is transparent to radiation within the second range of wavelength, and an interconnect structure connected to a signal transmitting surface of the image sensor element.

Image sensor and manufacturing method thereof

The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a dielectric structure disposed over a substrate. A plurality of conductive interconnect layers are disposed within the dielectric structure. The plurality of conductive interconnect layers include alternating layers of interconnect wires and interconnect vias. A metal-insulating-metal (MIM) capacitor is arranged within the dielectric structure. The MIM capacitor has a lower conductive electrode separated from an upper conductive electrode by a capacitor dielectric structure. The MIM capacitor vertically extends past two or more of the plurality of conductive interconnect layers.

High density MIM capacitor structure

A method for forming an image sensor device on a substrate is disclosed. The method includes (a) recessing a portion of the substrate thereby forming a first shallow trench; (b) forming a spacer layer surrounding at least part of a sidewall of the first shallow trench; and (c) forming a first deep trench that extends below the first shallow trench by further recessing the substrate while using the spacer layer as a mask.

Method for forming image sensor device

A method of forming a semiconductor image sensing device includes: providing a semiconductor substrate; forming a radiation sensitive region and a peripheral region in the semiconductor substrate, wherein the peripheral region surrounds the radiation sensitive region and includes a top surface projected from a backside of the semiconductor substrate and a sidewall coplanar with a sidewall of the semiconductor substrate and perpendicular to the top surface; forming a photon blocking spacer in the peripheral region, wherein the photon blocking spacer covers a portion of the sidewall of the peripheral region; and forming an anti reflective coating adjacent to the photon blocking layer.

Image sensing device with photon blocking layer and anti-reflective coating

A method for manufacturing an image sensor with deep trench spacing isolation is provided. A trench is formed in a semiconductor substrate, around and between a plurality of pixel regions of the semiconductor substrate. A cap is formed using epitaxy to seal a gap between sidewalls of the trench. Pixel sensors corresponding to the plurality of pixel regions are formed over or within the corresponding pixel regions. An image sensor resulting from the method is also provided.

Method for forming deep trench spacing isolation for CMOS image sensors

An image sensor employing deep trench spacing isolation is provided. A plurality of pixel sensors is arranged over or within a semiconductor substrate. A trench is arranged in the semiconductor substrate around and between adjacent ones of the plurality of pixel sensors, and the trench has a gap located between sidewalls of the trench. A cap is arranged over or within the trench at a position overlying the gap. The cap seals the gap within the trench. A method of manufacturing the image sensor is also provided.

Deep trench spacing isolation for complementary metal-oxide-semiconductor (CMOS) image sensors

A system and method for blocking light from regions around a photodiode in a pixel of an image sensor is provided. In an embodiment a first optical block layer is formed on a first glue layer and a second glue layer is formed on the first optical block layer. The formation of the first optical block layer and the second glue layer is repeated one or more times to form multiple optical block layers and multiple glue layers. As such, if voids open up in the optical block layers during further processing, there is another optical block layer to block any light that may have penetrated through the void.

Image sensor device and method

A backside illumination semiconductor image sensing device includes a semiconductor substrate. The semiconductor substrate includes a radiation sensitive diode and a peripheral region. The peripheral region is proximal to a sidewall of the backside illumination semiconductor image sensing device. The backside illumination semiconductor image sensing device further includes a first anti reflective coating (ARC) on a backside of the semiconductor substrate and a dielectric layer on the first anti reflective coating. Additionally, a radiation shielding layer is disposed on the dielectric layer. Moreover, the backside illumination semiconductor image sensing device has a photon blocking layer on the sidewall of the backside illumination semiconductor image sensing device. The at least a portion of a sidewall of the radiation shielding layer is not covered by the photon blocking layer and the photon blocking layer is configured to block photons penetrating into the semiconductor substrate.

Semiconductor device and manufacturing method thereof

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Hsinchu, Taiwan

Jung-I Lin