Electronics and Telecommunications Research Institute

Samsung Electronics Co., Ltd.

Jung-Hyung Pyo

O-Kyun Kwon

Gyung-Ock Kim

Dong-Woo Suh

Young-Gu Jin

Kyoung-ho Ha

Ju-Hwan Jung

Dong-jae Shin

Kwang-Hyun Lee

Ho-Chul Ji

Kwan-Sik Cho

Hyun-il Byun

Hee-Woo Park

Hiroshige Goto

A unit pixel includes a sensing transistor, a photo diode, and a reset drain region. The sensing transistor includes a reference active region, an output active region, and a gate. The gate is between the reference active region and the output active region to electrically connect the reference active region to the output active region based on a gate voltage. The reference active region and output active region are within a semiconductor substrate. The photo diode is under the gate within the semiconductor substrate. The reset drain region is within the semiconductor substrate and is electrically connected to the photo diode by the gate based on the gate voltage.

Unit pixel with photodiode under gate of sensing transistor and image pixel array including the same

A semiconductor package and a semiconductor device including the same. The semiconductor package includes: a package substrate; a plurality of connection elements that are disposed on the package substrate; and a semiconductor chip that includes at least one optical input/output element that transmits/receives an optical signal to/from the outside at an optical input/output angle with respect to a direction perpendicular to a bottom surface of the package substrate, and is electrically connected to the package substrate through the plurality of connection.

Semiconductor package and semiconductor device including the same

Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the buried insulating layer, and a silicon pattern spaced in at least one direction from the substrate is formed on the buried insulating layer. A first insulating layer is formed to enclose the silicon pattern.

Semiconductor device and method for forming the same

Provided are semiconductor integrated circuits including a grating coupler for optical communication and methods of forming the same. The semiconductor integrated circuit includes: a cladding layer disposed on a semiconductor substrate; a grating coupler including an optical waveguide on the cladding layer and a grating on the optical waveguide; and at least one reflector formed in the cladding layer below the grating.

Semiconductor integrated circuits including grating coupler for optical communication and methods of forming the same

Growing community of inventors

Seoul, South Korea

Jung-Hyung Pyo