Samsung Electronics Co., Ltd.

Vieworks Co., Ltd.

Jung Hyun Nam

Kyoung Ryoul Seo

The present disclosure provides a bidirectional TDI line image sensor. The bidirectional TDI line image sensor according to one embodiment of the present invention comprises: a pixel unit, which has N line sensors having M CCDs arranged in a line and being arranged in a scan direction, moves, in the scan direction, charges accumulated in the respective columns of the line sensors, and accumulates the same; and an output unit for parallelly receiving as inputs the charges accumulated in the pixel unit from the respective columns, performing analog-to-digital conversion on and storing the charges, and then sequentially outputting same.

Bidirectional TDI line image sensor

A single-output CCD image sensor selectively transfers a normal or a mirror image without changing the combination of clock signals needed by the HCCD. The CCD image sensor comprises VCCD's arrayed in each row, photodiodes connected to the VCCD's through transfer gates, and an upper HCCD connected to one end of the VCCD's. A rotating part for connecting one end of the upper and lower HCCD's as used for one of the normal or mirror image serial transfers. A control gate formed in parallel between the upper and the lower HCCD is used for the other of the normal or mirror image serial transfers, and operates in parallel. An output circuit is connected to the other end of the lower HCCD.

CCD image sensor for normal and mirror images

A solid-state image sensor of a CCD is disclosed, wherein the photodiodes in the photo-sensing part are arranged in regions separated horizontally. A vertical CCD channel is interposed between the photodiodes so that high resolution is achieved by increasing the horizontal resolution without any change of the driving pulse frequency or the charge handling capability.

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Suwon, South Korea

Jung Hyun Nam