Skhynix Inc.

Samsung Mobile Display Co., Ltd.

Samsung Display Co., Ltd.

Kmw Inc

Jung-Hyun Kwon

Sang-Gu Jo

Sung-Eun Lee

Seung-Gyu Jeong

Do-Sun Hong

Won-Gyu Shin

Yong-Ju Kim

Dong-Hoon Lee

Jae-Byung Park

Jong-Hyuk Kang

Dong-Gun Kim

Hyun-Deok Im

Jing-Zhe Xu

Jong-Hyun Park

Hae-Il Park

Hyun-Min Cho

Jae-Sun Lee

Young-Ook Song

Ja-Hyun Koo

Ki-Joong Kim

Chang-Soo Kim

Nam-Shin Park

Young-Suk Moon

Kyung-min Lee

Oleg Prudnikov

Myeng-Woo Nam

Min-Ki Nam

Min-Sung Kang

Sung-Kyun Kim

A semiconductor memory system including a resistive variable memory device and a driving method thereof are provided. The semiconductor memory system includes a memory controller including a scheduler configured to determine a generation period of a write command; a memory device including a memory cell array, the memory device being configured to write data input from the memory controller in the memory cell array in response to the write command; and a data determination circuit configured to output a change signal to the scheduler when all logic levels of the input data are equal to each other, the scheduler changing the generation period of the write command in response to the change signal.

Semiconductor memory system including scheduler for changing generation of command

In a cache memory used for communication between a host and a memory, the cache memory may include a plurality of cache sets, each comprising: a valid bit; N dirty bits; a tag; and N data sets respectively corresponding to the N dirty bits and each including data of a data chunk size substantially identical to a data chunk size of the host, wherein a data chunk size of the memory is N times as large as the data chunk size of the host, where N is an integer greater than or equal to 2.

Cache memory, memory system including the same, and eviction method of cache memory

A memory system includes: a memory device, including a plurality of memory cells, suitable for reading and writing data with a parity bit on a basis of a page; and a memory controller suitable for obtaining an error mask pattern based on compressed data when a number of error bits detected based on the data and the parity bit is equal to or less than a first threshold value and greater than a second threshold value, and controlling to write the compressed data, the parity bit updated based on the compressed data in which the error mask pattern is reflected, compression information on the compressed data and pattern information on the error mask pattern to the page.

Memory system and operating method thereof

A memory controller may include an address control block. The address control block may be configured to remap a write target address when a number of write data having a first logic level is within a correctable range and when a level of a datum corresponding to the write target address has the first logic level.

Memory controller, semiconductor memory system including the same, and method of driving the semiconductor memory system

A memory system includes a memory device including a plurality of memory blocks, a first detection block suitable for detecting a hot memory block based on a number of times that a write operation is performed among the memory blocks during the write operation, a second detection block suitable for detecting first memory blocks based on the number of times that the write operation is performed among the memory blocks and detecting a cold memory block based on addresses of the first memory blocks, when the hot memory block is detected, and a wear-leveling block suitable for swapping data of the hot memory block for data of the cold memory block.

Disclosed is a memory system includes a memory device including a plurality of memory blocks, a write operation management circuit configured to update write operation counts for the plurality of memory blocks, a first block detector configured to detect a hot memory block based on a first operation count value corresponding to the write operation count of a first memory block on which a write operation has been performed among the plurality of memory blocks, a second detector configured to detect a cold memory block based on a second operation count value corresponding to the write operation count of each of second memory blocks adjacent to the first memory block, and a controller configured to copy, if the hot memory block and the cold memory block are detected by the first and second detectors, data of the detected hot memory block or data of the detected cold memory block.

Memory system and operating method of the same

Semiconductor memory system with resistive variable memory device having scheduler for changing generation period of command and driving method thereof

A memory module includes a first memory device that includes first circuit nodes for communication with a memory controller and second circuit nodes for communication inside the memory module, a second memory device that includes first circuit nodes for communication with the memory controller and second circuit nodes for communication inside the memory module, and an internal data bus that couples the first memory device to the second memory device to carry data between the second circuit nodes of the first memory device and the second circuit nodes of the second memory device. When an internal read command is applied to the first memory device and an internal write command is applied to the second memory device, data is transferred from the first memory device to the second memory device through the internal data bus.

Delay circuit and write and read latency control circuit of memory, and signal delay method thereof

A memory system includes a memory device including one or more memory blocks, and configured to store data in a plurality of pages included in each memory block through a write operation, and a memory controller configured to count an operation number of write operations performed on the memory block, check whether the write operation is performed for each of the pages, select one or more victim pages among the pages, and copy data stored in the victim pages.

Reducing disturbance between adjacent regions of a memory device

A memory device is provided. The memory device includes a plurality of normal memory blocks; and at least two or more bad memory blocks, wherein data having the same number of bits as data to be stored in a normal memory block and a parity code having the number of bits at least twice greater than that of a parity code to be stored in the normal memory block are stored in a first bad memory block and a second bad memory block among the bad memory blocks.

Memory device, memory system, and operation method thereof

A method for operating a memory device includes: receiving a write command; checking out whether a data strobe signal toggles or not after a given time passes from a moment when the write command is received; when the data strobe signal is checked out to be maintained at a uniform level, detecting voltage levels of a plurality of data pads; and performing an operation that is selected based on the voltage levels of the plurality of the data pads among a plurality of predetermined operations.

Memory device, operating method thereof, and operating method of memory system including the same

A memory system comprises a memory device including a plurality of memory blocks, a write operation check unit configured to count the number of write operations performed on the respective memory blocks, a write count distribution management module configured to manage a distribution of the memory blocks based on the counted number of the write operations, and a wear leveling module configured to detect hot and cold memory blocks from the plurality of memory blocks based on the counted number of the write operation and the distribution, wherein the wear leveling module manages a history of the hot memory block and swaps the hot memory block with the cold memory block according to the managed history.

Memory system and operation method thereof

A memory system includes: a memory device; a cache memory suitable for caching a portion of a data stored in the memory device; and a read voltage controller suitable for controlling a level of a read voltage of the memory device by comparing a cache data in the cache memory with a data from the memory device corresponding to the cache data.

Memory system for controlling read voltage using cached data and operation method of the same

A memory system includes a memory device comprising first to Nth memory regions, wherein N is a natural number equal to or more than 2, and a memory controller suitable for checking numbers of first logic level data which are contained in first to Nth data groups to be written to the memory device, respectively, and writing the first to Nth data groups to the first to Nth memory regions in order based on the checked numbers.

Memory system including memory device and memory controller, and operation method thereof

A memory system includes: a first cell array including a plurality of memory cells; and a second cell array including a plurality of memory cells; and an address operation circuit suitable for generating a first cell array address, the first cell array address used for accessing at least one first cell in the first cell array, by adding a first value to an address, and generating a second cell array address, the second cell array address used for accessing at least one second cell in the second cell array, by adding a second value to the address.

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Seoul, South Korea

Jung-Hyun Kwon