Sk Siltron Co., Ltd.

Dongwoon Anatech Co., Ltd.

Lg Siltron Incorporated

Jung-Hyun Eum

Young-Jae Choi

Kye-Jin Lee

Ho-Jun Lee

Yu-Hwang Lee

Ho-Cheol Jang

Chung-Hyun Lee

Jae-Ho Song

Dong-Kun Lee

Kwang-Yong Choi

Semiconductor device

Provided is a semiconductor substrate including a growth substrate, one or more compound semiconductor layers disposed on the growth substrate, and one or more control layers disposed between the compound semiconductor layers. Each control layer includes multiple nitride semiconductor layers including at least Al.

Semiconductor substrate for controlling a strain

Provided is a semiconductor substrate including a seed layer disposed on a substrate, a buffer layer disposed on the seed layer, a plurality of nitride semiconductor layers disposed on the buffer layer, and at least one stress control layer between the plurality of nitride semiconductor layers. The buffer layer includes a plurality of step regions and at least one heterogeneous region. The plurality of step regions includes the same nitride semiconductor material. The heterogeneous region includes a different nitride semiconductor material from the step regions.

Semiconductor substrate

Growing community of inventors

Seoul, South Korea

Jung-Hyun Eum