Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Lg Display Co., Ltd.

Samsung Electro-mechanics Co., Ltd.

Jung-Hyeon Kim

Hyo-Jae Bang

Seong-Chan Han

Jun-Young Lee

Heui-seog Kim

Dong-chun Lee

Se-Ki Park

Jong-soo Lee

Sang-Il Park

Gi-Cherl Kim

Hee-Seop Kim

Cheol Kyu Shin

Yong-jin Kim

Dong-Woo Kim

Joo-Nyung Jang

Young-Lim Park

Mi-jeong Song

Ji-hyun Kim

Hak-soo Yu

Woo-sung Shim

Sung-Hwan Kim

Hwa-Sung Woo

Young-ho Lee

Jae-won Yoon

Dong-Hyun Im

Sung-Woon Kim

Dong-Chul Shin

Young-ho Moon

Sung-Soo Lee

Sung-bum Park

Jin-il Lee

Hyang-Ja Yang

Dai-woong Choi

Hyeong-Geun An

Hyun-Ju Lee

Dong-Min Yeo

Do-hyung Kim

Jong-bum Choi

Choong-Sun Shin

Hong-Sik Yoon

Jin-Soo Shin

Hyun-Seok Choi

Mun-Soo Park

Si-Joon Song

Young-Soo An

Jong-Hak Won

Keun-Bong Lee

Kee-uk Jeon

Sung-Lae Cho

Yong-Hyun Kim

Sun-Woo Lee

Jin-Ha Jeong

So-Hyun Lee

Jong-won Han

Kyoung-Sun Kim

Yeon-Ju Kim

Jun-Hee Son

So-Woon Kim

Sung-hoon Yang

Kwang-Hoon Lee

Seok Goh

Sang-ik Kim

Seong-Ho Moon

Ho-Jeong Choi

Urazaev Vladimir

Byoung-jun Min

Jung-Chan Cho

Tae-Gung Kim

Jun-Sig Park

Jin-Ho Shin

Kwan-heung Kim

Yang-Je Lee

Sang-II Park

Jae-geun Lim

Ui-Taek Jeong

Jin-Yong Park

Gennady Ivanov

Hwang-Yul Kim

Seung-Back Shin

Ki-Su Kim

Jin-won Kang

Doo-cheol Park

Ki-Taik Oh

Jae-Sang Baik

Hwa-Gyu Song

Dong-Houn Yang

Sang-Sik Lee

Bo-Woo Kim

Jun-Young 206-2003 Sinchang 2Nd Apt Lee

Jae-Sun You

A data processing method and an apparatus for an organic light emitting diode (OLED) display device are provided. The method includes modulating input data using a maximum degradation compensation gain, compensating degradation of the modulated data using a degradation compensation gain, accumulating the degradation-compensated data, determining a degree of degradation of each of sub-pixels, based on the accumulated data, detecting a degradation compensation gain in accordance with the determined degradation degree, storing the detected degradation compensation gain, and outputting the stored degradation compensation gain, detecting a maximum one of degradation compensation gains of respective sub-pixels, and outputting the detected maximum degradation compensation gain, analyzing the input data, thereby setting a peak luminance control (PLC) gain, and modulating the PLC gain, using the output maximum degradation compensation gain, and analyzing the degradation-compensated data, thereby detecting a peak luminance, and adjusting the detected peak luminance, using the modulated PLC gain.

Data processing method and apparatus for organic light emitting diode display device

A casing to support a solid state device SSD therein and super capacitors therein to be electronically connected together.

Super capacitor casing and supercapacitor embedded device

A display device comprises: a display panel including a first insulating substrate and a second insulating substrate that is arranged so as to deviate from the first insulating substrate; and an intermediate frame, wherein the intermediate frame includes: side walls that are arranged so as to correspond to four side surface of the display panel; a mounting portion which protrudes from the side walls inward and on which the first insulating substrate is mounted; and a supporting protrusion that protrudes from the mounting portion to the second insulating substrate and is arranged below the second insulating substrate and on the side of the first insulating substrate.

Display panel and display device including the same

A light source assembly includes a light source which emits light; a detector which detects the light and generates a light signal based on a property of the light; an operator operably connected to the detector and which receives the light signal and calculates a color coordinate of the light source based on the light signal; a comparator operably connected to the operator and which compares the color coordinate of the light source to a predetermined reference color coordinate; and a control unit operably connected to the comparator and which controls a pulse width modulation signal transmitted to the light source based on a result of the comparison of the comparator.

Light source assembly, liquid crystal display, and method of driving light source assembly

A test socket is provided that includes a socket body to receive an object to be tested, a lid disposed on the socket body, one or more pushers coupled to a first surface of lid to apply force to a first surface of the object toward the socket body, and a temperature controlling member to provide a temperature to the object. A semiconductor package may be tested in a test apparatus that includes the test socket, the methods of testing including receiving a semiconductor package in a socket in a test chamber, applying a first temperature to the test chamber to test the semiconductor package at a first test temperature, and applying a second temperature to the semiconductor package to test the semiconductor package at a second test temperature by controlling the application of the second temperature with the socket.

Test socket, and test apparatus with test socket to control a temperature of an object to be tested

A data line layout includes column selection lines arranged in a first direction at a layer on a memory cell array region, and data lines arranged in the first direction at the layer, the data lines being connected between I/O sense amplifiers and I/O pads.

Area-efficient data line layouts to suppress the degradation of electrical characteristics

Provided are method and apparatus for encoding and decoding an image by using a bit plane-based image encoding method and a block-based image encoding method respectively on bit planes based on the n-m most significant bits of an input image including n-bit pixel values and an image based on the m least significant bits of the input image.

Method and apparatus for encoding and decoding image using image separation based on bit location

A liquid crystal display includes; first and second substrates facing each other, a liquid crystal layer interposed between the first and second substrates and including liquid crystal molecules, a first subpixel electrode disposed on the first substrate, the first subpixel electrode receiving a first data voltage, a second subpixel electrode disposed on the first substrate, the second subpixel electrode receiving a second data voltage; and a short protrusion disposed on the second substrate and simultaneously facing the first and second subpixel electrodes, wherein the liquid crystal layer is vertically aligned and has positive dielectric anisotropy.

Liquid crystal display

A fan-out unit which can control a resistance difference among channels with efficient space utilization and a thin-film transistor (TFT) array substrate having the fan-out unit are presented. The fan-out unit includes: an insulating substrate; a first wiring layer which is formed on the insulating substrate and connected to a pad; a second wiring layer which is formed on the insulating substrate and connected to a TFT; and a resistance controller which is connected between the first wiring layer and the second wiring layer and includes a plurality of first resistors extending parallel to the first wiring layer and a plurality of second resistors extending perpendicular to the first resistors and alternately connecting to the first resistors, wherein the first resistors are longer than the second resistors.

Fan-out unit and thin-film transistor array substrate having the same

A semiconductor manufacturing apparatus and a wafer loading/unloading method thereof increase productivity. The semiconductor manufacturing apparatus includes a first boat and a second boat having a plurality of first slots and a plurality of second slots, respectively, and disposed such that the first slots and the second slots alternate each other, the first boat mounting a plurality of first wafers in the first slots to direct front faces of the first wafers in a predetermined direction, the second boat mounting a plurality of second wafers in the second slots to direct back faces of the second wafers in the predetermined direction; a reaction tube having an opening and containing the first and second boats mounting the first and second wafers; a plate sealing up the opening of the reaction tube containing the first boat and the second boat; a reaction gas supplier supplying reaction gas into the sealed reaction tube for a predetermined process; and a reaction gas exhauster exhausting the reaction gas from the reaction tube to the external of the reaction tube after the predetermined process.

Semiconductor device manufacturing apparatus and wafer loading/unloading method thereof

A reworkable passive element embedded printed circuit board (PCB) including a board member, first and second fillings, and a first passive element. The board member has first and second through holes which are spaced apart from each other. The first and second fillings are buried in the first and second through holes, respectively, and formed of a reflowable conductive material. The first passive element includes first and second electrodes. A first insertion groove is formed in a portion of a surface of the board member between the first and second through holes and portions of the first and second fillings. The first passive element is mounted on the first insertion groove. The first electrode includes a bottom surface and a side contacting the first filling and an exposed upper surface. The second electrode comprises a bottom surface and a side contacting the second filling and an exposed upper surface.

Reworkable passive element embedded printed circuit board

Provided are methods of forming a phase change memory device. A semiconductor device having a lower electrode and an interlayer insulating layer may be prepared. The lower electrode may be surrounded by the interlayer insulating layer. Source gases, a reaction gas and a purge gas may be injected into a process chamber of a semiconductor fabrication device to form a phase change material layer on a semiconductor substrate. The source gases may be simultaneously injected into the process chamber. The phase change material layer may be in contact with the lower electrode through the interlayer insulating layer. The phase change material layer may be etched to form a phase change memory cell in the interlayer insulating layer. An upper electrode may be formed on the phase change memory cell.

Methods of forming a phase change memory device

A semiconductor memory device includes a sub memory cell array region having memory cells each connected between word lines extending in a first direction and bit lines extending in a second direction that is orthogonal to the first direction of extension of the word lines and a sub word line driver region disposed at a side of the sub memory cell array region in the first direction and including sub word line drivers that activate the word lines. A sensing region is disposed at a side of the sub memory cell array region in the second direction and including an equalizer that precharges the bit line in response to a signal transferred through a drive signal line and at least one first control signal driver that activates an inverted control signal line in response to a signal transferred through a control signal line. A conjunction region disposed at an intersection between the sub word line driver region and the sensing region, in which the inverted control signal line is connected to the drive signal line.

Semiconductor memory device

A collection unit includes an exhaust conduit providing a path through which a process gas flows, a trap installed in the exhaust conduit, and a collection line connected to the trap. The trap has an inlet through which particles in the process are introduced into the trap, and the collection line penetrates a portion of the exhaust conduit to extend toward an outside region of the exhaust conduit. An apparatus including the collection unit and a method for collecting particles using the same are also provided.

Units for collecting particles, apparatus including the same and methods for collecting particles using the same

Growing community of inventors

Hwaseong-si, South Korea

Jung-Hyeon Kim