Skhynix Inc.

Kioxia Corporation

Jung Hyeok Kwak

Kazuya Sawada

Tadaaki Oikawa

Taiga Isoda

Young Min Eeh

Eiji Kitagawa

Jin Won Jung

In general, according to one embodiment, a magnetoresistance memory device includes: a first ferromagnetic layer; an insulating layer above the first ferromagnetic layer; a second ferromagnetic layer above the insulating layer; a third ferromagnetic layer above the second ferromagnetic layer; and a fourth ferromagnetic layer above the third ferromagnetic layer. The third ferromagnetic layer includes an oxide of an alloy including iron. The fourth ferromagnetic layer includes iron and a 5d transition metal.

Magnetoresistance memory device

Growing community of inventors

Icheon-si, South Korea

Jung Hyeok Kwak