Samsung Electronics Co., Ltd.

Lg Display Co., Ltd.

Coway Co., Ltd

Hynix Semiconductor Inc.

Lg Electronics Inc.

Woongjin Coway Co., Ltd

Skhynix Inc.

Microinfinity, Inc.

Jung-Hwan Lee

Jeeyong Kim

Jong-Hwan Lee

Hyun-Soo Shin

Jong-Min Kim

Kihyun Hwang

Sunggil Kim

Woonkyung Lee

Bonyoung Koo

Jin-Kyu Kang

Jintae Noh

Seong-Je Park

Kyung-Joon Kwon

Woo-Jin Joo

Jin-Seong Ka

Byoungsun Ju

Ho-Dong Nam

Jae-Young Lee

Sang-Bum Kim

Dae-seok Byeon

Dong-Woo Kim

Chul-Ho Kim

Ji-Hwan Kim

Myung Hoon Cho

Hyoung-Min Moon

Hyunmin Lee

Hee-Won Ahn

Tae-Seong Kwon

Gyeong-Min Lee

Jee-Yong Kim

In-Du Choi

Si-Hoon Lee

Kyu-Jun Kim

Hyunchul Back

Won-Jang Park

Byung-Chun Sakong

Kyu-Cheol Park

Beom-Seok Hah

Hyun Min Cho

Daeseok Byeon

Jung-Hun Lee

Han-Soo Kim

Sanghoon Ahn

Jin-Woo Choi

Kyu-Hyun Choi

Mun-Phil Park

Sang-Hyeon Kang

Yoo Jin Choi

Hee-Jung Hong

Eui-Yeol Oh

Young-Hoon Hong

Soo-Young Lee

Hyun-Seok Moon

Sung-Kon Cho

Myeong-Hoon Kang

Min-Suk Chang

Dong-Min Oh

Sang-Woo Seo

Jae-Man Kim

Do-Han Kim

Kwon-Jae Lee

Heyung-Sub Lee

In-Gyue Choi

Woo-Hee Yang

Byung-Kil Park

Kyung-Heon Lee

Byoung-Hoon Lim

Kwang-Heum Baik

Doo-Youl Jeon

Jung-Gyu Jang

Ui-Son Hwang

Claude Kwon

Sun-Hyeok Park

Han-soo Kim

Yu-Seung Choi

Young-Gun Cho

Byung-Il Kang

Young-Ju Seo

A nonvolatile memory device with improved reliability is provided. The nonvolatile memory device comprises a substrate, a mold structure including a plurality of word lines stacked on the substrate, a first word line cut region configured to cut the mold structure, a first channel structure spaced apart from the first word line cut region by a first distance, and disposed in the mold structure and the substrate, and a second channel structure spaced apart from the first word line cut region by a second distance, and disposed in the mold structure and the substrate, wherein the second distance is greater than the first distance, a first width of the first channel structure is different from a second width of the second channel structure, and a first length of the first channel structure is different from a second length of the second channel structure.

Nonvolatile memory device

A nonvolatile memory device and method for fabricating the same are provided. The nonvolatile memory device comprising: a substrate; a mold structure including a first insulating pattern and a plurality of gate electrodes alternately stacked in a first direction on the substrate; and a word line cut region which extends in a second direction different from the first direction and cuts the mold structure, wherein the word line cut region includes a common source line, and the common source line includes a second insulating pattern extending in the second direction, and a conductive pattern extending in the second direction and being in contact with the second insulating pattern and a cross-section in the second direction.

Nonvolatile memory device and method for fabricating the same

An evaporator for an ice maker includes an evaporator body having a refrigerant flow path formed therein; a dipping member connected to the evaporator body, for a refrigerant having a temperature lower than a freezing point of water to flow in the refrigerant flow path to generate ice in a state in which at least a portion of the dipping member is submerged in water; a heater having at least a portion inserted into the refrigerant flow path, and directly or indirectly heating at least one of the refrigerant in the refrigerant flow path, the evaporator body, and the dipping member to separate the ice generated on the dipping member from the dipping member; and a connection member connecting the evaporator body and the refrigerant flow path to be connected to a refrigeration cycle, and inserting the at least a portion of the heater into the refrigerant flow path.

Evaporator for ice maker

An ice storage includes a storage body having a storage space for storing ice and a discharge port for discharging ice to the outside, a transferring and breaking part which, by having at least a part thereof provided in the storage space, transfers the ice in the storage space to the discharge port, and if necessary, breaks the transferred ice, and a door part allowing the ice to be discharged through the discharge port as unbroken ice or broken ice unbroken or broken up by the transferring and breaking part. The transferring and breaking part includes a transferring member for transferring ice and a breaking member for breaking ice, and the transferring member and the breaking member are configured such that ice is not stuck therebetween while being transferred.

Ice storage

Disclosed is a water treatment apparatus which can extract clean water by means of the pressure of raw water. The disclosed water treatment apparatus comprises: a filter part which filters raw water; a storage part which stores clean water filtered by passing through at least a part of the filter part, the storage part having a first chamber and a second chamber of which the volume changes according to a change in the volume of the first chamber; an extraction part which is installed so as to provide the filtered clean water to a user; and an air supply part which is installed on a flow path connected to the storage part in order to supply air to either one of the first chamber or the second chamber of the storage part.

Water treatment apparatus

A water treatment apparatus is provided. The water treatment apparatus includes a filtering unit including a water filter filtering raw water, a sterilizing water generator producing sterilizing water from purified water filtered by at least a portion of the filtering unit, and a discharge member through which the purified water, filtered by the filtering unit, is discharged externally. The sterilizing water produced in the sterilizing water generator sterilizes the discharge member and at least a portion of a flow path connected to the discharge member.

Disclosed are a water storage tank bladder, a manufacturing method therefor, the water storage tank including the bladder, and a water treatment apparatus including the water storage tank. According to one embodiment of the present invention, the water storage tank bladder used in the water storage tank to receive and store water and discharge the stored water has a lower side of which the thickness can be thicker than the thickness of the upper side of the bladder and thicker than the thickness of the lateral sides of the bladder.

Water storage tank bladder, manufacturing method therefor, water storage tank including bladder, and water treatment apparatus including water storage tank

A water discharge device is disclosed. A water discharge device according to an embodiment of the present invention may comprise: a main body having a flow channel formed therein such that water flows through the same and having a discharge opening connected to the flow channel and to the outside such that the water, which has flowed through the flow channel, is discharged to the outside; an opening/closing portion comprising an opening/closing member movably provided in the flow channel so as to open/close an opening/closing hole formed in the flow channel; and a manipulation portion that comprises a rotatable member, which rotates, and interworks with the main body and the opening/closing portion such that the opening/closing member is moved in the flow channel by a rotation of the rotatable member.

Water discharge device

A water treatment apparatus capable of sterilizing a storage tank and a sterilizing and cleansing method thereof are disclosed. The water treatment apparatus includes: a filter unit purifying raw water; a storage tank connected to the filter unit and storing purified water which has been filtered through the filter unit; an electrolytic sterilizer installed between the filter unit and the storage tank, electrolyzing only purified water which has been filtered through at least a portion of the filter unit to generate sterilization water, and supplying the sterilization water to the storage tank; a drain unit connected to the storage tank and discharging water accommodated in the storage tank; and a control unit controlling a water purification mode of the filter unit and a sterilization mode through the electrolytic sterilizer and the drain unit.

Water treatment apparatus and sterilizing and cleansing method thereof

Semiconductor devices are provided. A semiconductor device includes a stack of alternating insulation layers and gate electrodes. The semiconductor device includes a channel material in a channel recess in the stack. The semiconductor device includes a charge storage structure on the channel material, in the channel recess. Moreover, the semiconductor device includes a gate insulation layer on the channel material. The gate insulation layer undercuts a portion of the channel material. Related methods of forming semiconductor devices are also provided.

Semiconductor devices including gate insulation layers on channel materials and methods of forming the same

A washing method of a water treatment apparatus is provided. The washing method includes a wash water inflow operation in which wash water flows into circulation members, and a circulation washing operation in which a circulation modulation circulates the wash water through passages of the water treatment apparatus.

Washing device for water treatment apparatus and washing method thereof

Three-dimensional (3D) semiconductor memory devices capable of improving reliability may be provided. For example, a three dimensional (3D) memory device, in which a plurality of memory cell strings are vertically arranged, may include a substrate, a stack structure of alternating a plurality of interlayer dielectric (ILD) layers and a plurality of gate electrodes, at least one of the ILD layers including pores, a vertical structure penetrating the stack structure and electrically connected to the substrate, and a data storage layer between the stack structure and the vertical structure.

Three-dimensional semiconductor memory device

A washing device for a water treatment apparatus is provided. The washing device includes circulation members connected to passages of the water treatment apparatus to circulate wash water through the passages of the water treatment apparatus, a circulation module connected to the circulation members for circulating the wash water through the passages of the water treatment apparatus, with the circulation members thereby washing the passages of the water treatment apparatus, a drainpipe connected to the circulation members, a passage switching unit connected to a portion where the circulation members are coupled to the drainpipe to switch passage of the wash water, and a circulation pump connected to the circulation members to selectively circulate the wash water in the connection pipes through the drainpipe or the passages of the water treatment apparatus.

Semiconductor devices including gate insulation layers on channel materials

Provided are a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes a charge storage pattern formed on a substrate; a dielectric pattern formed on the charge storage pattern; a first conductive pattern including silicon doped with a first impurity of a first concentration, the first conductive pattern being disposed on the dielectric pattern; and a second conductive pattern including metal silicide doped with a second impurity of a second concentration, the second conductive pattern being disposed on the first conductive pattern. The first concentration may be higher than the second concentration.

Semiconductor devices

Growing community of inventors

Seoul, South Korea

Jung-Hwan Lee