Korea Advanced Institute of Science and Technology

Electronics and Telecommunications Research Institute

Korea Electric Power Corporation

Korea Western Power Co., Ltd.

Korea East-west Power Co., Ltd.

Korea Midland Power Co., Ltd.

Korea South Power Co., Ltd.

Korea Institute of Machinery & Materials

Jung-Hwan Kim

Byeong-Soo Bae

Dae-Joong Kim

Young-Rok Kim

Doo-Young Kim

Yeong-Eun Yoo

Young-joo Eo

Seung-Hyun Kim

Ji-Hoon Ko

Sung-Kwon Park

Tae-Ho Lee

Young-Ho Seo

Jae-Sung Yoon

Sun-Min Kim

Jun-su Park

Kyung-Ho Jung

No-Won Kim

Kwang-Ha Park

Hyun-Ku Park

Yong-Hee Jang

Tae-Joon Jeon

Moon-Ki Kim

Yun-Jung Lee

A bent rotor straightening method using low-frequency induction heating and a bent rotor straightening apparatus using the method are proposed. The bent rotor straightening method using low-frequency induction heating according to an embodiment of the present invention includes: calculating a heating speed when a first target temperature for correcting bending of a rotor using low-frequency induction heating is set; maintaining the first target temperature for a heating time determined on the basis of a diameter of the rotor when the first target temperature is reached, when performing primary thermal correction at the heating speed; checking whether a bending amount of the rotor reaches a predetermined critical value in accordance the result of performing the primary thermal correction; and finishing correction of bending of the rotor in accordance with the result of checking the bending amount of the rotor.

Bent rotor straightening method using low frequency induction heating and bent rotor straightening apparatus using same

Disclosed herein is a method of manufacturing a barrier rib for a plasma display panel, including a silicon compound resin. The method according to a first embodiment of this invention includes providing a silicon compound resin layer on a substrate; pressing the silicon compound resin layer using a master having a pattern corresponding to the shape of a barrier rib to be transferred; and curing the silicon compound resin and then releasing the master. In addition, the method according to a second embodiment includes loading a silicon compound resin into grooves of a master having a pattern corresponding to the shape of a barrier rib; pressing the master on a substrate to transfer the silicon compound to the substrate; and curing the transferred silicon compound resin and then releasing the master.

Method of manufacturing barrier rib for plasma display panel

Provided is a dielectric/barrier rib composition for a plasma display panel, comprising a compound 1 of the formula or at least one compound belonging to a polyhedral oligosilsesquioxane (compound 2) having RSiOas a repeating unit, or comprising inorganic/organic hybrid materials having compounds 1 and 2 as a monomer, wherein X is an integer inclusive 0, R, R, R, R, Rand Rare independently a linear, branched or cyclic C-Chydrocarbon group containing one or more alkyl, alkoxy, ketone, acryl, methacryl, allyl, aromatic, halogen, amino, mercapto, ether, ester, sulfone, nitro, hydroxyl, cyclobutene, carbonyl, carboxyl, alkyd, urethane, vinyl, nitrile, hydrogen, or epoxy functional group, and A is oxygen or NH. The inorganic/organic hybrid materials can be a material composed of an extended matrix, containing silicon and oxygen or nitrogen atoms, and having at least one silicon fraction directly bonded to a substituted or unsubstituted hydrocarbon atom.

Dielectric/barrier rib composition for plasma display panel and manufacturing method thereof

The learning algorithm called Expand-and-Truncate Learning (ETL) is invented to synthesize a three-layer threshold network (TLTN) with guaranteed convergence for an arbitrary switching function. There has not yet been found an algorithm to synthesize a threshold network for an arbitrary switching function. The most significant contribution of this invention is the development of a learning algorithm for a three-layer TLTN which guarantees convergence for any switching function, automatically determining a required number of threshold elements in the hidden layer. For example, it turns out that the required number of threshold elements in the hidden layer of a TLTN for an n-bit parity function is equal to n. The threshold element in the proposed TLTN employs only integer weights and integer thresholds. Therefore, this will greatly facilitate actual hardware implementation of the proposed TLTN using currently available digital VLSI technology.

Synthesis of threshold networks

Growing community of inventors

Daejeon, South Korea

Jung-Hwan Kim