Lg Innotek Co., Ltd.

Suzhou Lekin Semiconductor Co., Ltd.

Jung Hun Jang

Seung Keun Nam

Jeong Sik Lee

Jeong Soon Yim

Won Hee Choi

Sung Hoon Jung

Yong Tae Moon

Youn Joon Sung

Yong Seon Song

Jong Hak Won

Byeoung Jo Kim

Ho Jae Kang

Surface-emitting laser devices and light-emitting devices including the same are provided. A surface-emitting laser device can include: a first reflective layer and a second reflective layer; and an active region disposed between the first reflective layer and the second reflective layer, wherein the first reflective layer includes a first group first reflective layer and a second group first reflective layer, and the second reflective layer includes a first group second reflective layer and a second group second reflective layer.

Surface-emitting laser device and light emitting device including the same

A light emitting device, according to one embodiment, may comprise: a substrate having a pattern part disposed on the upper surface thereof; a first buffer layer disposed on the substrate; a second buffer later disposed on the first buffer layer; a first conductive semiconductor layer disposed on the second buffer layer; an active layer disposed on the first conductive semiconductor layer; a second conductive semiconductor layer disposed on the active layer; and a void layer disposed on the first buffer layer corresponding to the pattern part of the substrate. By further forming a void on the buffer layer, the embodiment has the effect of more effectively preventing defects caused by a potential difference.

Light emitting device, method for manufacturing light emitting device and lighting system having same

A light emitting device, according to one embodiment, may comprise: a substrate; a first conductive semiconductor layer disposed on the substrate; an active layer disposed on the first conductive semiconductor layer and generating an ultraviolet light; a second conductive semiconductor layer disposed on the active layer; and a hole injection layer disposed between the active layer and the second conductive semiconductor layer and comprising a first layer comprising AlGaN (0&#x3c;x&#x2264;1) and a second layer comprising GaN. The embodiment has the hole injection layer to be multi-layered, thereby having the effect of effectively preventing the absorption of ultraviolet light.

Ultraviolet light emitting device

A semiconductor device includes a silicon substrate, an initial buffer layer disposed on the silicon substrate and including aluminum nitride (AlN), and a semiconductor device layer disposed on the initial buffer layer and including a semiconductor compound. There is no SiN between the initial buffer layer and the silicon substrate, and a silicon lattice of the silicon substrate directly contacts a lattice of the initial buffer layer.

Semiconductor device and method of manufacturing the same

The light emitting device includes a first semiconductor layer, a second semiconductor layer and an active layer provided between the first semiconductor layer and the second semiconductor layer. A first light extraction layer is provided on the first semiconductor layer and includes a nitride semiconductor layer. The first light extraction layer includes a plurality of first layers. The refractive indexes of the first layers decrease with increasing distance from the first semiconductor layer.

LED with multilayer light extractor having a refractive index gradient

A semiconductor device includes a silicon substrate, an initial buffer layer disposed on the silicon substrate, a transition layer disposed on the initial buffer layer, and a device structure disposed on the transition layer. The transition layer includes at least one of AlGaN (where 0&#x3c;x&#x3c;1) layers provided on the initial buffer layer and an inserted buffer layer provided at least one of between the AlGaN layers, at a lower end portion of the transition layer, or at an upper end portion of the transition layer.

Semiconductor device, light emitting device using the same, and light emitting device package including the same

Disclosed are a light emitting device, a method of manufacturing the light emitting device, a light emitting device package and a lighting system. The light emitting device includes a silicon substrate; a nitride buffer layer on the silicon substrate; and a gallium nitride epitaxial layer on the nitride buffer layer, wherein the nitride buffer layer includes a first nitride buffer layer having a first aluminum nitride layer on the silicon substrate and a first gallium nitride layer on the first aluminum nitride layer.

Light emitting device

A light emitting device includes a light emitting structure including a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer; a multi-contact layer disposed on at least a predetermined region of the second conductive type semiconductor layer, the multi-contact layer including at least one pair-structure configured of a first layer including InGaN having a dopant doped thereon and a second layer including GaN having a different dopant doped thereon; and a first electrode and a second electrode to provide currents to the first conductive type semiconductor layer and the second conductive type semiconductor layer, respectively.

Light emitting diode, light emitting device package including the same and lighting system

A light emitting device includes an active layer having quantum walls and quantum wells, a first conductive type semiconductor layer on one side of the active layer, a second conductive type semiconductor layer on the other side of the active layer, and an interfacial layer arranged between the active layer and the first conductive type semiconductor layer or between the active layer and the second conductive type semiconductor layer, wherein the interfacial layer includes barrier layers and basal layers provided between the barrier layers, wherein an energy bandgap of each of the barrier layers increases from the first conductive type semiconductor layer or the second conductive type semiconductor layer to an active layer direction linearly, and greatest energy bandgaps of the barrier layers are different from one another.

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Seoul, South Korea

Jung Hun Jang