Taiwan Semiconductor Manufacturing Comp. Ltd.

Illumina Corporation

Jung-Huei Peng

Shang-Ying Tsai

Chun-Wen Cheng

Chia-Hua Chu

Jiou-Kang Lee

Chun-Ren Cheng

Ting-Hau Wu

Yao-Te Huang

Hsin-Ting Huang

Li-Min Hung

Ping-Yin Liu

Yuan-Chih Hsieh

Yi-Chuan Teng

Hung-Hua Lin

Yu-Chia Liu

Yi-Chien Wu

Chin-Yi Cho

Hung-Chia Tsai

Kuei-Sung Chang

Chia-Shiung Tsai

Lan-Lin Chao

Fei-Lung Lai

Shiang-Chi Lin

Hsing-Lien Lin

Xin-Hua Huang

Lung Yuan Pan

Chung-Yi Yu

Chang-Ming Wu

Ming-Tung Wu

Chia-Pao Shu

Yi-Shao Liu

Chia-Ming Hung

Li-Cheng Chu

Hui Han

Danny Yuan Chan

Shane Bowen

Chung-Hsien Lin

Shih-Wei Lin

Yeong-Jyh Lin

Wen-Chuan Tai

Hsiang-Fu Chen

Allen Timothy Chang

Yi Heng Tsai

Ching-Kai Shen

Martin Liu

Sang Ryul Park

Richard Chu

Chun-wen Cheng

Nien-Tsung Tsai

Chi-Hang Chin

Te-Hsi Lee

Sang Park

Wei Siang Tan

Li-Chen Chu

H T Huang

Lan-Lin

Li-Ming Hung

Lin-Min Hung

Kang-Che Huang

Hung Hua Lin

Optical modules and methods of forming the same are provided. In an embodiment, an exemplary method includes forming multiple first optical elements over a first wafer, forming multiple second optical elements over a second wafer, forming multiple third optical elements over a third wafer, aligning the first wafer with the second wafer such that, upon the aligning of the first wafer with the second wafer, each first optical element is vertically overlapped with a corresponding second optical element. The method also includes bonding the first wafer with the second wafer to form a first bonded structure, aligning the second wafer with the third wafer such that, and upon bonding the second wafer of the first bonded structure to the third wafer, where upon the aligning of the second wafer with the third wafer, each second optical element is vertically overlapped with a corresponding third optical element.

Methods of forming optical modules

A flow cell includes: a first substrate; a second substrate; a first resin layer disposed over an inner surface of the first substrate; a second resin layer disposed over an inner surface of the second substrate; a first plurality of biological capture sites located at the first resin layer; a second plurality of biological capture sites located at the second resin layer; and a polymer layer interposed between the first resin layer and the second resin layer, such that the first substrate is attached to the second substrate via at least the first resin layer, the polymer layer, and the second resin layer, wherein the polymer layer defines a plurality of microfluidic channels that extend through polymer layer.

Method to produce chemical pattern in micro-fluidic structure

The present disclosure provides a structure and method of fabricating the structure. The structure comprises a cavity enclosed by a first substrate and a second substrate opposite to the first substrate. Further, the structure includes a feature in the cavity and the feature is protruded from a surface of the first substrate. In addition, the structure includes a dielectric layer over the feature, wherein the dielectric layer includes a first surface in contact with the feature and a second surface opposite to the first surface is positioned toward the cavity.

Semiconductor MEMS structure

A microelectromechanical system (MEMS) structure and method of forming the MEMS device, including forming a first metallization structure over a complementary metal-oxide-semiconductor (CMOS) wafer, where the first metallization structure includes a first sacrificial oxide layer and a first metal contact pad. A second metallization structure is formed over a MEMS wafer, where the second metallization structure includes a second sacrificial oxide layer and a second metal contact pad. The first metallization structure and second metallization structure are then bonded together. After the first metallization structure and second metallization structure are bonded together, patterning and etching the MEMS wafer to form a MEMS element over the second sacrificial oxide layer. After the MEMS element is formed, removing the first sacrificial oxide layer and second sacrificial oxide layer to allow the MEMS element to move freely about an axis.

MEMS device having a metallization structure embedded in a dielectric structure with laterally offset sidewalls of a first portion and a second portion

The present disclosure provides a structure. The structure comprises a cavity enclosed by a first substrate and a second substrate opposite to the first substrate. Further, the structure includes a feature in the cavity and the feature is protruded from a surface of the first substrate. In addition, the structure includes a dielectric layer over the feature, wherein the dielectric layer includes a first surface in contact with the feature and a second surface opposite to the first surface is positioned toward the cavity.

The present disclosure provides one embodiment of an integrated microphone structure. The integrated microphone structure includes a first silicon substrate patterned as a first plate. A silicon oxide layer formed on one side of the first silicon substrate. A second silicon substrate bonded to the first substrate through the silicon oxide layer such that the silicon oxide layer is sandwiched between the first and second silicon substrates. A diaphragm secured on the silicon oxide layer and disposed between the first and second silicon substrates such that the first plate and the diaphragm are configured to form a capacitive microphone.

Structure for integrated microphone

A method for manufacturing a MEMS structure is provided. The method includes providing a MEMS substrate having a first surface, forming a first buffer layer on the first surface of the MEMS substrate, and forming a first roughening layer on the first buffer layer. Also, a MEMS structure is provided. The MEMS structure includes a MEMS substrate, a first buffer layer, a first roughening layer, and a CMOS substrate. The MEMS substrate has a first surface and a pillar is on the first surface. The first buffer layer is on the first surface. The first roughening layer is on the first buffer layer. The CMOS substrate has a second surface and is bonded to the MEMS substrate via the pillar. Moreover, an air gap is between the first roughening layer and the second surface of the CMOS substrate.

MEMS structure and manufacturing method thereof

The present disclosure relates to a method of forming an integrated chip structure. The method includes forming a plurality of interconnect layers within a dielectric structure over a substrate. A dielectric layer arranged along a top of the dielectric structure is patterned to define a via hole exposing an uppermost one of the plurality of interconnect layers. An extension via is formed within the via hole and one or more conductive materials are formed over the dielectric layer and the extension via. The one or more conductive materials are patterned to define a sensing electrode over and electrically coupled to the extension via. A microelectromechanical systems (MEMS) substrate is bonded to the substrate. The MEMs substrate is vertically separated from the sensing electrode.

Semiconductor structure for MEMS device

Method for manufacturing a MEMS device by first hybrid bonding a CMOS wafer to a MEMS wafer

The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, a metallization layer over the substrate, and a sensing structure over the metallization layer. The sensing structure includes an outgassing layer over the metallization layer, a patterned outgassing barrier in proximity to a top surface of the outgassing layer, the patterned outgassing barrier exposing a portion of the outgassing layer, and an electrode over the patterned outgassing barrier. The method for manufacturing the semiconductor device is also provided.

CMOS-MEMS structure and method of forming the same

A device includes a substrate, a routing conductive line over the substrate, a dielectric layer over the routing conductive line, and an etch stop layer over the dielectric layer. A Micro-Electro-Mechanical System (MEMS) device has a portion over the etch stop layer. A contact plug penetrates through the etch stop layer and the dielectric layer. The contact plug connects the portion of the MEMS device to the routing conductive line. An escort ring is disposed over the etch stop layer and under the MEMS device, wherein the escort ring encircles the contact plug.

MEMS devices with an element having varying widths

An embodiment is a MEMS device including a first MEMS die having a first cavity at a first pressure, a second MEMS die having a second cavity at a second pressure, the second pressure being different from the first pressure, and a molding material surrounding the first MEMS die and the second MEMS die, the molding material having a first surface over the first and the second MEMS dies. The device further includes a first set of electrical connectors in the molding material, each of the first set of electrical connectors coupling at least one of the first and the second MEMS dies to the first surface of the molding material, and a second set of electrical connectors over the first surface of the molding material, each of the second set of electrical connectors being coupled to at least one of the first set of electrical connectors.

MEMS devices including MEMS dies and connectors thereto

MEMS devices and methods of fabrication thereof are described. In one embodiment, the MEMS device includes a bottom alloy layer disposed over a substrate. An inner material layer is disposed on the bottom alloy layer, and a top alloy layer is disposed on the inner material layer, the top and bottom alloy layers including an alloy of at least two metals, wherein the inner material layer includes the alloy and nitrogen. The top alloy layer, the inner material layer, and the bottom alloy layer form a MEMS feature.

MEMS devices and methods of fabrication thereof

The present disclosure relates to a method of depositing a fluid onto a substrate. In some embodiments, the method may be performed by mounting a substrate to a micro-fluidic probe card, so that the substrate abuts a cavity within the micro-fluidic probe card that is in communication with a fluid inlet and a fluid outlet. A first fluidic chemical is selectively introduced into the cavity via the fluid inlet of the micro-fluidic probe card.

Fluid deposition apparatus and method

Growing community of inventors

Jhubei, Taiwan

Jung-Huei Peng