Actron Technology Corporation

Jung-Hsien Lan

I-Dar Shen

A method for manufacturing a power diode including the following steps is provided. (a) A semi-finished product of the power diode is provided. The semi-finished product of the power diode includes a first electrode, a second electrode, a semiconductor chip, and an adhesive material. The semiconductor chip is located between the first electrode and the second electrode. The adhesive material is located on the first electrode and surrounds the semiconductor chip. (b) The semi-finished product of the power diode is placed into a processing chamber. (c) Pressure in the processing chamber is adjusted to a first predetermined pressure and the first predetermined pressure is maintained for a predetermined time. (d) Pressure in the processing chamber is adjusted to a second predetermined pressure. Step (c) to Step (d) are performed at least twice to form the power diode. (e) The power diode is removed from the processing chamber.

Growing community of inventors

Taoyuan, Taiwan

Jung-Hsien Lan