Luxpert Technologies Co., Ltd.

Jung-Hoon Shin

Nam-Kyoo Park

Hak-Seung Han

Se-Young Seo

Disclosed is a gain-providing optical power equalizer which can equalize optical channel output or gain while amplifying signal output. In prior art technologies, optical power equalization has been achieved by attenuating signal output differently depending upon optical channels. However, the optical power equalizer of the present invention is characterized in that it achieves equalization of optical power by giving optical gain differently depending upon optical channels. According to the present invention, the output of optical channels can be adjusted to be flat or as desired without deteriorating signal to noise ratio.

Gain-providing optical power equalizer

The present invention relates to a waveguide amplifier which is comprised of silica or silica-related material co-doped with silicon nanoclusters and rare earth elements, and more particularly, to a waveguide amplifier with higher efficiency enhanced by top-pumping method and focusing means for pumping light. The waveguide amplifier of the present invention comprises of: (a) a substrate; (b) an optical waveguide including: a lower cladding layer formed on the substrate; a core layer which is made of silica or silica-related material co-doped with silicon nanoclusters and rare earth elements on the lower cladding layer and has a refractive index higher than that of the lower cladding; and an upper cladding layer formed on the core layer; and (c) a light source, spaced apart from the waveguide, for optically pumping the waveguide, wherein the waveguide amplifier operates by exciting the rare earth elements through electron-hole combinations in the silicon nanoclusters.

Top-pumped waveguide amplifier

Thin film for optical applications, light-emitting structure using the same and the fabrication method thereof are disclosed. The present invention provides a silica or silica-related thin film for optical applications in which silicon nanoclusters and rare earth elements are co-doped. The average size of the silicon nanoclusters is less than 3 nm and the concentration of the rare earth elements is less than 0.1 atomic %. The ratio of the rare earth element concentration to that of silicon nanoclusters is controlled to range from 1 to 10 in the thin film. The thin film emits light by exciting the rare earth elements through electron-hole recombinations in the silicon nanoclusters. According to the present invention, the conditions such as the size and concentration of the silicon nanoclusters, the concentration of the rare earth element, and their concentration ratio are specifically optimized to fabricate optical devices with better performance.

Growing community of inventors

Daejon, South Korea

Jung-Hoon Shin