Qualcomm Incorporated

Jung Ho Yoon

Young Kyu Song

Xiaonan Zhang

Jong-Hoon Lee

Uei-Ming Jow

Ryan David Lane

Jonghae Kim

Mario Francisco Velez

Daeik Daniel Kim

Uei-ming Jow

Sangjo Choi

Uei Ming Jow

A semiconductor package according to some examples of the disclosure may include a first body layer, a transformer that may comprise one or more inductors, coupled inductors, or inductive elements positioned above the first body layer. A first ground plane is on a top of the first body layer between the first body layer and the inductive element. The first ground plane may have conductive lines generally perpendicular to a magnetic field generated by the inductive element, and a second ground plane on a bottom of the first body layer opposite the first ground plane. The first and second ground planes may also provide heat dissipation elements for the semiconductor as well as reduce or eliminate eddy current and parasitic effects produced by the inductive element.

Patterned grounds and methods of forming the same

An inductor structure includes a first set of traces corresponding to a first layer of an inductor, a second set of traces corresponding to a second layer of the inductor, and a third set of traces corresponding to a third layer of the inductor that is positioned between the first layer and the second layer. The first set of traces includes a first trace and a second trace that is parallel to the first trace. A dimension of the first trace is different from a corresponding dimension of the second trace. The second set of traces is coupled to the first set of traces. The second set of traces includes a third trace that is coupled to the first trace and to the second trace. The third set of traces is coupled to the first set of traces.

Inductor structure in a semiconductor device

Some implementations provide an integrated device that includes a capacitor and an inductor. The inductor is electrically coupled to the capacitor. The inductor and the capacitor are configured to operate as a filter for an electrical signal in the integrated device. The inductor includes a first metal layer of a printed circuit board (PCB), a set of solder balls coupled to the PCB, and a second metal layer in a die. In some implementations, the capacitor is located in the die. In some implementations, the capacitor is a surface mounted passive device on the PCB. In some implementations, the first metal layer is a trace on the PCB. In some implementations, the inductor includes a third metal layer in the die. In some implementations, the second metal layer is an under bump metallization (UBM) layer of the die, and the third metal is a redistribution layer of the die.

High quality factor filter implemented in wafer level packaging (WLP) integrated device

Some features pertain to an integrated device (e.g., package-on-package (PoP) device) that includes a substrate, a first die, a first encapsulation layer, a first redistribution portion, a second die, a second encapsulation layer, and a second redistribution portion. The substrate includes a first surface and a second surface. The substrate includes a capacitor. The first die is coupled to the first surface of the substrate. The first encapsulation layer encapsulates the first die. The first redistribution portion is coupled to the first encapsulation. The second die is coupled to the second surface of the substrate. The second encapsulation layer encapsulates the second die. The second redistribution portion is coupled to the second encapsulation layer.

Package on package (PoP) integrated device comprising a capacitor in a substrate

A package substrate (or printed circuit board) that includes at least one dielectric layer, a first inductor structure is at least partially located in the dielectric layer, a third interconnect, and a second inductor structure. The first inductor structure includes a first interconnect, a first via coupled to the first interconnect, and a second interconnect coupled to the first via. The third interconnect is coupled to the first inductor structure. The third interconnect is configured to provide an electrical path for a ground signal. The second inductor structure is at least partially located in the dielectric layer. The second inductor is coupled to the third interconnect. The second inductor structure includes a fourth interconnect, a second via coupled to the fourth interconnect, and a fifth interconnect coupled to the second via. The first and second inductor structures are configured to operate with a capacitor as a 3harmonic suppression filter.

Growing community of inventors

San Diego, CA, United States of America

Jung Ho Yoon