Samsung Electronics Co., Ltd.

Dongbu Hitek Co., Ltd.

Snu Rdb Foundation

Jung-Ho Ahn

Seung-Hwan Kim

Jae-Ho Lee

Sung-Jun Kim

Kyung-Hee Lee

Ji-Hyun Park

Dong-Hwan Kim

Austin Kim

Joon-Ho Byun

Chan-Woo Park

Young-Hoon Son

Sang-Hyuk Kwon

Ho-Saeng Kim

Ju-Yeong Lee

Sung-Min Her

Bo-Ram Namgoong

Man-Su Han

Ju-Yeoung Kim

Euy-Beom Lee

The present invention relates to an electronic device for controlling an unmanned aerial vehicle and a control method therefor. The electronic device for controlling an unmanned aerial vehicle according to the present invention comprises: a first sensor for sensing a first direction; a second sensor for sensing a second direction opposite to the first direction; and a processor electrically connected to the first sensor and the second sensor, wherein the processor may be configured to: determine whether the unmanned aerial vehicle is located in a first environment on the basis of at least one sensing data obtained by the first sensor; control sensing operations of the first sensor and the second sensor according to the determination result; and control motion of the unmanned aerial vehicle on the basis of at least one sensing data obtained by the first sensor and the second sensor.

Electronic device for controlling unmanned aerial vehicle and control method therefor

A memory device may include a memory cell array, a bloom-filter circuit, a cache memory circuit, and a selecting circuit. The bloom-filter circuit may be configured to output a determination result signal that indicates that there is a possibility that a received address is one of failed addresses corresponding to failed cells of the memory cell array. The cache memory circuit may be configured to, store the failed addresses and a first set of data corresponding to the respective failed addresses, and configured to, when the determination result signal indicates a possibility, provide a comparison result signal by determining whether received address coincides with one of the failed addresses. The selecting circuit may be configured to output either first data of the first set of data or second data of the memory cell array corresponding to the received address based on determination result signal and comparison result signal.

Semiconductor memory device and memory system including the same

An electronic device is provided. The electronic device includes a front cover forming a front surface, a rear cover forming a rear surface, a sidewall at least partially enclosing a space formed between the front cover and the rear cover and at least partially formed of a conductive member, a display disposed in the space and including a screen region exposed through the front cover, a non-conductive structure disposed in adjacent to the sidewall or in contact with the sidewall in the space and including a first surface facing the front cover and a second surface facing the rear cover, a first antenna pattern overlapping the non-conductive structure and fed with electricity, a second antenna pattern overlapping the non-conductive structure and disposed adjacent to the first antenna pattern to form electromagnetic-field coupling with the first antenna pattern, and an integrated circuit chip feeding electricity to the first antenna pattern.

Electronic device including antenna device

A multi-band built-in antenna of a portable terminal is provided. The antenna includes a first antenna radiator on a front surface of a substrate (e.g., a main board), and a second antenna radiator on an opposite surface of the substrate. The substrate has ground surfaces on both sides separated from a non-ground area on which the radiators are disposed. The first radiator may be in the form of a Planar Inverted F Antenna (PIFA), with a first end branched off into two parts, one part used for power feeding and the other part electrically coupled to the ground surface. The first radiator has a portion that extends from the first end to an opposite end. The second radiator is continuous from the opposite end of the first radiator through a via (hole) in the main board.

Multi-band antenna for portable terminal with radiators on opposite surfaces of substrate

A semiconductor device is disclosed. Embodiments relate to a semiconductor device which includes an active region including a source region, a drain region, and a channel region. A gate electrode, source electrodes, and a drain electrode are formed around the active region. A plurality of gate fingers diverge from the gate electrode into the channel region. A plurality of source fingers diverge from the source electrodes into the source region, the source fingers being disposed between the gate fingers in a predetermined pattern, the source fingers having at least two finger lines connected to each other via at least one grid line. A plurality of drain fingers diverge from the drain electrode into the drain region, the drain fingers being disposed between the gate fingers where the source fingers are not disposed.

Semiconductor device

A semiconductor device including a semiconductor substrate having source/drain regions, a gate electrode formed on and/or over the semiconductor substrate, spacers formed against sidewalls of the gate electrode, an interlayer insulating layer formed over the semiconductor substrate and the gate electrode and having a plurality of contact holes formed therein, and contact plugs formed within the contact holes. The contact plugs can include a first contact plug and a second contact plug electrically connected to the gate electrode, and a third contact plug and a fourth contact plug electrically connected to the source/drain regions.

Semiconductor device and method of fabricating the same, and nor gate circuit using the semiconductor device

A semiconductor device capacitor fabrication method that is capable of enabling the simultaneous use of an oxide capacitor and a PIP capacitor of a semiconductor device depending upon whether metal line terminals are used. The semiconductor device capacitor fabrication method can include forming an active region and a first gate electrode over a semiconductor substrate, partially depositing a silicon nitride layer, over which a capacitor will be formed, over the first gate electrode, forming a second gate electrode over the silicon nitride, sequentially forming a first insulation layer and a second insulation layer over the resultant structure and forming line terminals extending through the first insulating layer and the second insulating layer for a transistor and a capacitor.

Semiconductor device capacitor fabrication method

Growing community of inventors

Seoul, South Korea

Jung-Ho Ahn