Samsung Electronics Co., Ltd.

Jung-Hee Chung

Jae-hyoung Choi

Young-Min Kim

Seok-Jun Won

Young-Jin Kim

Han-jin Lim

Jong-Cheol Lee

Wan-don Kim

Seok-Woo Nam

Jin-Yong Kim

Se-hoon Oh

Kyoung-Ryul Yoon

Suk-jin Chung

Seog-Min Lee

Sung-Ho Kang

Jong-bom Seo

Seung-Sik Chung

Jae-hyun Joo

A method of forming a semiconductor device includes forming a lower electrode layer on a substrate, forming a surface oxide layer on the lower electrode layer, partially removing the lower electrode layer to form a lower electrode, removing the surface oxide layer to expose the lower electrode, forming a capacitor dielectric layer on the lower electrode, and forming an upper electrode on the capacitor dielectric layer.

Method of forming semiconductor device having a capacitor

A method of fabricating a uniformly wrinkled capacitor lower electrode without the need to perform a high-temperature heat treatment and a method of fabricating a capacitor including the uniformly wrinkled capacitor lower electrode are provided. A first conductive layer is formed. Then, a second conductive layer including about 20% to about 50% of impurities is formed on the first conductive layer. Next, at least some of the impurities are exhausted from the second conductive layer by heat treating the second conductive layer. A surface of the second conductive layer is wrinkled due to the exhaustion of the impurities from the second conductive layer. A dielectric layer and an upper capacitor electrode may then be formed.

Methods of forming integrated circuit electrodes and capacitors by wrinkling a layer that includes a high percentage of impurities

Provided are methods of manufacturing dielectric films including forming a first dielectric film on a wafer using atomic layer deposition (ALD) in a first batch type apparatus, forming a second dielectric film on the first dielectric film using atomic layer deposition in a second batch type apparatus, wherein the second dielectric film has a higher crystallization temperature than the first dielectric film and forming a third dielectric film on the second dielectric film using atomic layer deposition in a third batch type apparatus. Methods of manufacturing metal-insulator-metal (MIM) capacitors using the methods of forming the dielectric films and batch type atomic layer deposition apparatus for forming the dielectric films are also provided.

Methods and batch type atomic layer deposition apparatus for forming dielectric films and methods of manufacturing metal-insulator-metal capacitors including the dielectric films

A method of manufacturing a dielectric layer for a capacitor including sequentially supplying and purging a first and a second precursor material for a first and a second predetermined amount of time, respectively, in an initial cycle, sequentially supplying and purging the first and the second precursor materials for a third predetermined amount of time, which is shorter than the first and/or second predetermined amount of time, in a post cycle, which follows the initial cycle, and repeating the initial and post cycles to form a dielectric layer having a predetermined thickness.

Method of manufacturing a dielectric film in a capacitor

Growing community of inventors

Suwon-si, South Korea

Jung-Hee Chung