Samsung Electronics Co., Ltd.

Korea University Research and Business Foundation

Samsung Electro-Mechanics Co., Ltd.

Stemmedience Co., Ltd.

Jung Han Lee

Byoung-Gi Kim

Jae Hwan Lee

Tae Yong Kwon

Byung Sun Yoon

Jai-Hee Moon

Seungkwon You

Jun Sung Kim

Eun Kyoung Jun

Sung Jin Park

Jong Pil Kim

Sun Wook Kim

Myung Il Kang

Kihwan Lee

June Seok Heo

Hong Seon Yang

Ki Hwan Lee

Seong Ju Kim

Joo Hee Jung

Ji Hyun Kim

Jong Won Lee

Young Gwan Ko

Myung Sam Kang

Tae Hong Min

Sang Su Kim

Jang Ho Lee

Chang Jae Yang

Ji Hye Hwang

Yeon Cheol Heo

Hye-Youn Jung

Eulsoon Park

Sang Hyuk Hong

Isaac Maeng

Hwan Wook Choi

Su Hyun Gwon

Kyoung Shik Cho

Jonggun Kim

Hwang Heui Lee

A semiconductor device includes a substrate having first and second regions, first fin groups spaced along a first direction on the first region, each of the first fin groups including adjacent first and second fins having longitudinal directions in a second direction intersecting the first direction, and third to fifth fins spaced along a third direction on the second region, the third to fifth fins having longitudinal directions in a fourth direction intersecting the third direction. The third through fifth fins are at a first pitch, the first and second fins are at a second pitch equal to or smaller than the first pitch, each of the first fin groups is at a first group pitch greater than three times the first pitch and smaller than four times the first pitch, and a width of the first and second fins is same as width of the third fin.

Method for fabricating semiconductor device

Semiconductor device and method for fabricating the same

A method for manufacturing a semiconductor device includes performing a first ion implantation process on a substrate to form a lower dopant region in the substrate, patterning the substrate having the lower dopant region to form active patterns, and performing a second ion implantation process on the active patterns to form an upper dopant region in an upper portion of each of the active patterns. The lower and upper dopant regions have a same conductivity type.

Methods for manufacturing semiconductor devices

A semiconductor device including a first fin protruding on a substrate and extending in a first direction; a first gate electrode on the first fin, the first gate electrode intersecting the first fin; a first trench formed within the first fin at a side of the first gate electrode; a first epitaxial layer filling a portion of the first trench, wherein a thickness of the first epitaxial layer becomes thinner closer to a sidewall of the first trench; and a second epitaxial layer filling the first trench on the first epitaxial layer, wherein a boron concentration of the second epitaxial layer is greater than a boron concentration of the first epitaxial layer.

Semiconductor device

A circuit board includes an insulating part including insulating layers, metal layers disposed on the insulating layers, vias each passing through at least one insulating layer among the insulating layers and connecting together at least two metal layers among the metal layers; a first thermally conductive structure including a thermally conductive material, at least a part of the thermally conductive structure being inserted into the insulating part, a first via having one surface contacting the first thermally conductive structure, a first metal pattern contacting another surface of the first via, a first bonding member connected to the first metal pattern, and pads to which a first electronic component is connected on an outermost surface of a metal layer disposed on an outermost surface of the insulating part, the pads being at least in a first region and a second region having a higher temperature than the first region.

Circuit board and circuit board assembly

Semiconductor devices are provided. The semiconductor devices include active fins including a buffer layer disposed on a substrate and a channel layer disposed on the buffer layer and having a first second lattice constant higher than a lattice constant of the buffer layer, a gate structure covering the channel layer and intersecting the active fins, sidewall spacers disposed on both sidewalls of the gate structure, and capping layers disposed to contact lower surfaces of the sidewall spacers and having a width substantially the same as a width of the lower surfaces of the sidewall spacers.

Semiconductor device having strained channel layer and method of manufacturing the same

Disclosed is a composition for reprogramming somatic cells to generate embryonic stem cell-like cells, comprising: a) a Bmi1 (B cell-specific Moloney murine leukemia virus integration site 1) protein or a nucleic acid molecule coding for Bmi1; and b) an Oct4 protein or a nucleic acid molecule coding for Oct4. Also, a method is provided for reprogramming somatic cells to generate embryonic stem cell-like cells using the composition. In addition to reducing the number of the genetic factors conventionally needed, the composition and method allow the generation of pluripotent embryonic stem cell-like cells which have high potential in the cell therapy of various diseases.

Composition for reprogramming somatic cells to generate induced pluripotent stem cells, comprising Oct4 in combination with Bmi1 or its upstream regulator, and method for generating induced pluripotent stem cells using the same

The present invention relates to a culture medium for the fetus-derived mesenchymal stem cells in amniotic fluid. More particularly, the present invention relates to a composition for improving skin conditions, comprising the culture medium of fetus-derived mesenchymal stem cells in amniotic fluid as an active ingredient, in which the skin conditions to be improved include whitening, wrinkles, skin damages caused by UV rays or skin lifting. Further, the present invention relates to a method for preparing the composition, comprising the steps of culturing the fetus-derived mesenchymal stem cells in amniotic fluid; and collecting the culture medium.

Composition for improving skin conditions using fetal mesenchymal stem cells from amniotic fluid

Provided is a composition for reprogramming somatic cells to generate embryonic stem cell-like cells, comprising: a) a Bmi1 (B cell-specific Moloney murine leukemia virus integration site 1) protein or a nucleic acid molecule encoding the Bmi1 protein; and b) at least one low molecular weight substance selected from the group consisting of a set of a MEK/ERK (mitogen-activated protein kinase/extracellular regulated kinase) inhibitor and a GSK (glycogen synthase kinase) inhibitor, a set of a G9a HMTase (G9a histone methyltransferase) inhibitor and a DMNT (DNA methyltransferase) inhibitor, and a histone deacetylase inhibitor. Also, a method is provided for reprogramming somatic cells to generate embryonic stem cell-like cells using the composition. In addition to reducing the number of the reprogramming factors conventionally needed, the composition and method allow the generation of pluripotent embryonic stem cell-like cells which have high potential in the cell therapy of various diseases.

Composition for reprogramming somatic cells to generate induced pluripotent stem cells, comprising Bmi1 and low molecular weight substance, and method for generating induced pluripotent stem cells using the same

Growing community of inventors

Anyang-si, South Korea

Jung Han Lee