Lg Electronics Inc.

Lg Lcd Inc.

Jung-Ha Kim

Hyun-jun Kim

According to the present invention, there is disclosed a mobile terminal, comprising a case made of a metal that forms an appearance of the mobile terminal, a printed circuit board (PCB) having a wireless communication module that is mounted within the case, a connecting terminal having a conductive material that is electrically connected to the PCB and mounted on the case, and an insulation sealing member disposed between the case and the connecting terminal to insulate the connecting terminal from the case as well as to seal a space between the case and the connecting terminal.

Mobile terminal

A mobile terminal includes: a terminal casing including a first casing and a second casing combined with the first casing; an external antenna mounted on an external surface of the terminal casing; an internal antenna mounted within the terminal casing; and at least one fastening screw that fastens the first and second casings and electrically connects the external and internal antennas. The size and thickness of the terminal can be reduced.

A method of forming an insulating layer pattern in a liquid crystal display which enables the formation of an insulating layer pattern on a substrate under a low temperature without the need of expensive equipment and complicated processes, wherein the formation speed of the insulating layer is accelerated. The method includes the steps of forming an organic thin layer containing silicon on an insulated substrate, exposing the thin layer to a gaseous ambience including, oxygen, generating a plurality of oxygen radicals and silicon radicals by applying ultraviolet rays to the thin layer using a mask having a predetermined pattern, forming an insulating layer by reacting the silicon radicals with the oxygen radicals, and defining an insulating layer pattern by removing a portion of the thin layer free of the ultraviolet rays.

Method of forming an insulating layer pattern in a liquid crystal display

A method for forming a silicon oxide film, SiO.sub.x, where X=1 or 2, on an electrode of a thin film transistor, e.g., for a liquid crystal display device. The method includes the steps of: forming an electrode on a substrate; forming an organic silicon-containing thin film on exposed surfaces of the electrode and the substrate; providing a gaseous atmosphere of oxygen or air about the electrode and the substrate; and irradiating the thin film with ultra violet light to produce radicals, including silicon radicals, from the thin film. The irradiation also produces oxygen radicals from the atmosphere. The silicon and oxygen radicals react to form the silicon oxide.

Growing community of inventors

Seoul, South Korea

Jung-Ha Kim