Samsung Sdi Co., Inc.

Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Jung-Gyu Nam

Sang-Cheol Park

Young-jun Park

Sang-cheol Park

Jun-Won Suh

Jeong-Doo Yi

Kyu-sik Kim

Jan-Dee Kim

Sol Choi

Ju-Hee Sohn

Da-Woon Han

Bong-Kyoung Park

Hyun-Hwa Song

Ju-Hyeong Han

Seok-Hun Hong

In-Ki Kim

Woo-Su Lee

Hye-Ri Eom

Jung-Yup Yang

O-Hyun Kwon

Won-Cheol Jung

Chang-ho Noh

Jungyup Yang

Ki-Yong Song

Gug-Il Jun

Byoung-Dong Kim

Dong-Gi Ahn

Seoung-Jin Seo

Seong-Ryong Hwang

Jin-Soo Mun

Hye-suk Jo

A flexible rechargeable battery includes: a first conductive substrate; a second conductive substrate facing the first conductive substrate; and a sealant at edges of the first conductive substrate and the second conductive substrate. The first conductive substrate includes a first resin layer, a first barrier layer, a second resin layer, a first electrode current collector layer, and a first electrode coating layer that are sequentially stacked inward from a first side of the flexible rechargeable battery. The second conductive substrate includes a third resin layer, a second barrier layer, a fourth resin layer, a second electrode current collector layer, and a second electrode coating layer that are sequentially stacked inward from a second side of the flexible rechargeable battery.

Flexible rechargeable battery

A battery includes a conductive substrate, the conductive substrate including a first resin layer, a barrier layer, a second resin layer, a first electrode current collector layer, and a first electrode coating layer that are sequentially stacked inward from an outermost side of the battery, an exterior member disposed to face the conductive substrate, a sealing portion formed at edges of the conductive substrate and the exterior member, and at least one second inner electrode positioned between the conductive substrate and the exterior member and stacked using a separator as a border.

A method of manufacturing a solar cell having increased light efficiency due to increased gallium distribution on a surface of a light absorption layer, the method including forming a first electrode on a substrate, forming a precursor that includes at least one of copper, gallium, and indium on the first electrode, forming a preliminary light absorption layer by providing selenium to the precursor, forming the preliminary light absorption layer further including performing a heat treatment, and forming a liquid state CuSe compound, forming a light absorption layer by providing a compound including at least one of gallium and indium to the preliminary light absorption layer, and forming a second electrode on the light absorption layer.

Method of manufacturing solar cell

A stack-type image sensor using a compound semiconductor. The stack-type image sensor includes a stack of photoelectric conversion units which are sequentially arranged in a light incident direction and which absorb light in ascending order of a wavelength from shortest to longest.

Compound semiconductor image sensor

A photoacceptive layer having a core-shell structure and a solar cell using the same are provided. More specifically, a photoacceptive layer including a metal oxide of a core-shell structure which can improve photoconversion efficiency by improving a electron migration path, and a solar cell using the same are provided.

Photoreceptive layer comprising metal oxide of core-shell structure and solar cell using the same

A solar cell manufacturing method includes forming a first electrode on a substrate, forming a mixed metal layer on the first electrode, forming a light absorbing layer by injecting hydrogen selenide on the entire surface of the mixed metal layer using a gas injection device, and forming a second electrode on the light absorbing layer. Further, the gas injection device includes a gas pipeline, an inner gas pipe positioned in the gas pipeline and having an opening, and a plurality of injection nozzles disposed below the gas pipeline.

Gas injection device and solar cell manufacturing method using the same

A tandem solar cell includes: a substrate; a front electrode disposed on the substrate; a back electrode disposed opposite to the front electrode on the substrate; a first cell disposed below the front electrode and including a first buffer layer and a first light absorption layer; and a second cell disposed above the back electrode and including a second light absorption layer and a second buffer layer. The first light absorption layer includes a CuGaSeS layer and a CuGaSe layer, and the second light absorption layer includes a semiconductor compound selected from the group consisting of CuInSe, CuInGaSe, CuInSeS, CuInGaSeS and any combinations thereof. The CuGaSeS layer of the first light absorption layer is disposed closer than the CuGaSe layer of the first light absorption layer to the front electrode.

Tandem solar cell and method of manufacturing same

Provided is a semiconductor anode including: a metal oxide semiconductor formed on a conductive substrate; a dye formed on a surface of the metal oxide semiconductor; and a polymer self-assembled on a surface of the metal oxide semiconductor. Provided are also a dye-sensitized solar cell, a method of manufacturing the dye-sensitized solar cell, and a polymer composition used for the method of manufacturing the dye-sensitized solar cell. The dye-sensitized solar cell includes an organic material-incorporated metal oxide semiconductor. Therefore, the transfer of electrons in the semiconductor to an electrolyte can be prevented, thereby increasing photocurrent and photovoltage, resulting in enhancement in energy conversion efficiency.

Surface-modified semiconductor electrode, dye-sensitized solar cell, method of manufacturing the solar cell, and polymer composition used for the method

Provided is a CMOS image sensor that uses thiophene derivatives. The CMOS image sensor includes first through third photoelectric conversion units vertically and sequentially stacked on a semiconductor substrate. The first photoelectric conversion unit detects blue light and comprises a first electrode, a second electrode, and a p-type thiophene derivative layer between the first electrode and the second electrode.

CMOS image sensor having thiophene derivatives

Growing community of inventors

Yongin-si, South Korea

Jung-Gyu Nam