Lg Innotek Co., Ltd.

Samsung Electronics Co., Ltd.

Sungkyunkwan University

Jung Eun Han

Byung Sook Kim

Se Woong Na

Dong Geun Shin

Ki Won Kim

Byoung-Hee Lee

Sun Young Lee

Jun Tai Kim

Kyoung Seok Min

Bum Sup Kim

Jang Hoon Kang

Tae Eon Kim

Joon Rae Cho

Moo Seong Kim

Won Jin Kim

Jun Soo Park

Seo Yong Ha

Joon Ii Cha

Sang iL Kim

A circuit board according to an embodiment includes an insulating layer; a circuit pattern disposed on the insulating layer; and a protective layer disposed on the insulating layer and the circuit pattern, and including first and second regions having different heights; wherein the circuit pattern includes: a first-first circuit pattern corresponding to the first region of the protective layer; and a first-second circuit pattern corresponding to the second region of the protective layer, wherein a height of the first region of the protective layer is lower than a height of the first-first circuit pattern, wherein a height of the second region of the protective layer is higher than a height of the first-second circuit pattern, wherein a surface of the first-first circuit pattern includes: a first portion in contact with the first region of the protective layer, and a second portion excluding the first portion, and wherein a surface roughness Ra of the first portion is different from a surface roughness Ra of the second portion.

Circuit board

A printed circuit board according to an embodiment comprises: an insulating layer; a circuit pattern disposed on the upper surface of the insulating layer; a support layer which is disposed on the upper surface of the insulating layer to expose the upper surface of the circuit pattern and is in contact with the sides of the circuit pattern; and a protective layer disposed on the upper surfaces of the support layer and the circuit pattern, wherein the upper region of the insulating layer comprises a first region and a second region, and the protective layer comprises an open region exposing the upper surfaces of the support layer and the circuit pattern that are disposed in the first region, and the support layer comprises a first upper surface positioned at the highest level among the upper surfaces of the support layer and a second upper surface positioned at the lowest level among the upper surfaces of the support layer, the second upper surface being lower than the first upper surface, and the protective layer comprises a first portion which contacts the upper surface of the circuit pattern of the first region and a second portion which contacts the upper surface of the support layer of the first region, and the second portion of the protective layer contacts the second upper surface of the support layer and includes a first lower surface which is lower than the upper surface of the circuit pattern.

A circuit board including an insulating layer including a first region and a second region; a plurality of outer layer circuit patterns disposed on upper surfaces of the first region and the second region of the insulating layer; and a solder resist including a first part disposed on the first region of the insulating layer and a second part disposed on the second region of the insulating layer. The first part includes an upper surface having a curved surface and exposes an upper surface of an outer layer circuit pattern disposed on the first region of the insulating layer. The second part covers an upper surface of an outer layer circuit pattern disposed on the second region of the insulating layer, and at least a part of the upper surface of the first part is positioned lower than the upper surface of the outer layer circuit pattern.

A circuit board according to an embodiment includes: an insulating layer including first to third regions; an outer layer circuit pattern disposed on an upper surface of the first to third regions of the insulating layer; and a solder resist including a first part disposed on the first region of the insulating layer, a second part disposed on the second region, and a third part disposed on the third region, wherein the outer layer circuit pattern includes: a first trace disposed on an upper surface of the first region of the insulating layer; and a second trace disposed on an upper surface of the third region of the insulating layer; wherein a height of the first trace is different from a height of the second trace; and an upper surface of the first part of the solder resist is positioned lower than an upper surface of the first trace.

A circuit board according to an embodiment comprises: an insulating layer including first to third regions; an outer layer circuit pattern disposed on the upper surface of the first to third regions of the insulating layer; and a solder resist including a first part disposed in the first region of the insulating layer, a second part disposed in the second region, and a third part disposed in the third region, wherein the outer layer circuit pattern has a first height, the third part of the solder resist is disposed on the upper surface of the outer layer circuit pattern to have a second height, the first region includes a first sub-region and a second sub-region, the first part includes a first sub-part disposed in the first sub-region and a second sub-part disposed in the second sub-region, the upper surface of the first sub-part is located to be higher than the upper surface of the outer layer circuit pattern and lower than the upper surface of the third part, the upper surface of the second sub-part is located to be lower than the upper surface of the outer layer circuit pattern, and the surface roughness of the third part of the solder resist is different from the surface roughness of the first part of the solder resist.

A liquid lens includes a first plate in which a cavity accommodating a conductive liquid and a non-conductive liquid is formed; a first electrode disposed on the first plate; a second electrode disposed under the first plate; a second plate disposed on the first electrode; and a third plate disposed under the second electrode, wherein the conductive liquid includes a solvent comprising 20 to 60% by weight of water and 20 to 60% by weight of antifreeze; 10 to 20% by weight of a solute; and 0.4 to 2% by weight of a chelation agent or an ion inhibitor.

Liquid lens, camera module and optical device including the same

A silicon carbide powder according to the embodiment includes nitrogen having a concentration in a range of about 100 ppm to about 5000 ppm. A method for manufacturing silicon carbide powder according to the embodiment includes preparing a mixture by mixing a silicon source including silicon with a solid carbon source or a carbon source including an organic carbon compound; heating the mixture; cooling the mixture; and supplying a nitrogen-based gas into the mixture.

Silicon carbide powder, method for manufacturing the same and method for growing single crystal

A vacuum heat treatment apparatus according to the embodiment comprises a chamber; a thermal insulator in the chamber; a reaction container in the thermal insulator; a heating member between the reaction container and the the thermal insulator for heating the reaction container; and a temperature measuring member in or on a surface of the reaction container, wherein the temperature measuring member comprises a thermocouple and a protective tube surrounding the thermocouple, and the protective tube comprises tungsten (W), tantalum (Ta), or silicon carbide (SiC).

Vacuum heat treatment apparatus

A method for manufacturing a silicon carbide powder according to the embodiment includes forming a mixture by mixing a silicon (Si) source containing silicon with a solid carbon (C) source or a C source containing an organic carbon compound; heating the mixture; cooling the mixture; and supplying hydrogen gas into the mixture.

Silicon carbide powder, method for manufacturing the same and silicon carbide sintered body, method for manufacturing the same

Disclosed are silicon carbide powders and a method of preparing the same. The method includes forming a mixture by mixing a silicon (Si) source, a carbon (C) source, and a silicon carbide (SiC) seed, and reacting the mixture. The silicon carbide (SiC) powders include silicon carbide (SiC) grains having a &#x3b2;-type crystal phase and a grain size in a range of about 5 &#x3bc;m to about 100 &#x3bc;m.

Silicon carbide powder and method for manufacturing the same

A silicon carbide powder includes at least one group selected from a first group comprising an alpha phase silicon carbide pulverulent body of which a granule size (D50) is greater than 0 &#x3bc;m and less than 45 &#x3bc;m with impurities less than 10 ppm, a second group comprising an alpha phase silicon carbide pulverulent body of which a granule size is greater than 45 &#x3bc;m and less than 75 &#x3bc;m with impurities less than 10 ppm, and a third group comprising an alpha phase silicon carbide pulverulent body of which a granule size is greater than 75 &#x3bc;m and less than 110 &#x3bc;m with impurities less than 10 ppm. In addition, a method for preparing a silicon carbide powder includes adding seeds to a beta silicon carbide powder, and forming an alpha silicon carbide powder by heat treating the beta silicon carbide powder.

Silicon carbide powder comprising alpha phase silicon carbide granules of trimodal particle size distribution and low impurities

A method of fabricating silicon carbide powder according to the embodiment comprises the steps of preparing a mixture by mixing a silicon source comprising silicon, a silicon carbide source and a carbone source comprising at least one of a solid carbon and a organic compound; and reacting the mixture.

Method of fabricating silicon carbide powder

A method of fabricating silicon carbide powder according to the embodiment comprises the steps of preparing a mixture by mixing a silicon source comprising silicon with a carbon source comprising a solid carbon source or an organic carbon compound; reacting the mixture; and controlling the reacting of the mixture, wherein the step of controlling the reacting comprises a step of supplying process gas or reaction product gas.

Disclose are a reaction container and a vacuum heat treatment apparatus. A method of preparing a reaction container comprises preparing a graphite mixture by mixing first and second graphite powders having particle sizes different from each other, preparing a graphite molded body by pressing the graphite mixture, and processing the graphite molded body. The density of the graphite molded body is in a range of 1.8 g/cmto 2.1 g/cm. A method of preparing a reaction container comprises preparing a graphite molded body by pressing graphite powders, and processing the graphite molded body to prepare the reaction container. A carbon source is impregnated into the graphite molded body or the reaction container, and density of the reaction container is in a range of 1.8 g/cmto 2.1 g/cm.

Reaction container and vacuum heat treatment apparatus having the same

A method of fabricating silicon carbide according to the embodiment comprises the steps of preparing a mixture by mixing a dry silicon source with a carbon source comprising an organic carbon compound; and reacting the mixture, wherein a viscosity of the carbon source is in a range of 20 cps to 1000 cps.

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Seoul, South Korea

Jung Eun Han