Senic Inc.

Skc Co., Ltd.

Jung Doo Seo

Jong Hwi Park

Jung-Gyu Kim

Jung Woo Choi

Kap-Ryeol Ku

Myung Ok Kyun

Jonggab Baek

Myung-Ok Kyun

Jung Gyu Kim

Kap Ryeol Ku

Byung Kyu Jang

Jun Rok Oh

Ki Ryun Park

Hoon Tae Kim

Sang Ki Ko

Eun Su Yang

Disclosed are a silicon carbide powder and a method of manufacturing a silicon carbide ingot using the same. More particularly, the silicon carbide powder includes carbon and silicon and has a particle circularity of 0.4 to 0.9 measured through 2D image analysis.

Silicon carbide powder and method for manufacturing silicon carbide ingot using the same

Disclosed are a silicon carbide powder, a method of manufacturing a silicon carbide powder, and a silicon carbide wafer. More particularly, the silicon carbide powder includes carbon and silicon and in the silicon carbide powder, O1s/C1s of a surface measured by X-ray photoelectron spectroscopy is 0.28 or less.

Silicon carbide powder, method for manufacturing silicon carbide ingot using the same, and silicon carbide wafer

The method of preparing a silicon carbide ingot includes: disposing a raw material and a silicon carbide seed crystal to be separated in a reactor having an internal space; adjusting a temperature, a pressure, and an atmosphere of the internal space for sublimating the raw material and growing the silicon carbide ingot on the silicon carbide seed crystal; and cooling the reactor and retrieving the silicon carbide ingot, wherein the adjusting proceeds in a first inert gas atmosphere having a flow quantity of 100 sccm to 300 sccm, the cooling proceeds in a second inert gas atmosphere having a flow quantity of 1 sccm to 250 sccm, and the reactor has a thermal conductivity of 120 W/mK or less.

Silicon carbide wafer and method of preparing the same

A silicon carbide wafer has one surface and the other surface opposite to the one surface. An average Rmax roughness of the one surface is 2.0 nm or less, and an average Ra roughness of the one surface is 0.1 nm or less. An edge region is a region in which a distance from an edge of the silicon carbide wafer toward a center is 5% to 75% of a radius of the silicon carbide wafer, and a central region is a region having a radius of 25% of the radius of the silicon carbide wafer at the center of the silicon carbide wafer. A difference between an average Rmax roughness of the edge region of the one surface and an average Rmax roughness of the central region of the one surface is 0.01 nm to 0.5 nm.

Silicon carbide wafer and semiconductor device

In a silicon carbide wafer in an embodiment, in the photoluminescence signal intensity spectrum obtained after irradiating a laser on one surface of the silicon carbide wafer, the number of peak signals having an intensity more than 1.2 times the average signal intensity of the spectrum is 1/cmor less.

Silicon carbide wafer and semiconductor device applied the same

Disclosed are a silicon carbide wafer and a method of manufacturing the same. The silicon carbide wafer includes an upper surface and a lower surface, the upper surface includes a first target region, the first target region being within 85% of a radius of the upper surface based on a center of the upper surface, a first peak omega angle measured at intervals of 15 mm in a first direction in the first target region is within −1° to +1° based on a peak omega angle measured at the center of the upper surface, and the first direction is a [1-100] direction and a direction passing through the center of the upper surface.

Silicon carbide wafer and method of manufacturing same

A silicon carbide wafer manufacturing method includes: a bending measuring step of measuring a first edge having the greatest degree of a bending at one surface of a silicon carbide ingot having one surface; a cutting start step of starting a cutting at a second edge having a distance of r×a along an edge of the one surface from the first edge in a direction parallel to or with a predetermined off angle with respect to the one surface through the wire saw, a cutting speed being decreased to a first cutting speed in the cutting start step; a cutting proceeding step in which the first cutting speed is substantially constant within a variation of about ±5% of the first cutting speed; and a finish step in which the cutting speed is increased from the first cutting speed and the cutting of the silicon carbide ingot is completed.

Manufacturing method of silicon carbide wafer, silicon carbide wafer and system for manufacturing wafer

An embodiment relates to a multilayer graphite sheet with excellent electromagnetic shielding capability and thermal conductivity, and a manufacturing method therefor, wherein the multilayer graphite sheet has a multilayer structure of five or more layers in total and can be manufactured to have a thick thickness of 70 &#x3bc;m or more such that the electromagnetic shielding capability can be significantly improved. In addition, the multilayer graphite sheet is manufactured by graphitizing a hybrid laminate in which heterogeneous materials are mixed such that thermal conductivity and electromagnetic shielding capability can be simultaneously realized at a lower cost, thereby being useful as a thick film sheet which used in various applications such as home appliances and electric vehicles.

Multilayer graphite sheet with excellent electromagnetic shielding capability and thermal conductivity and manufacturing method therefor

A graphite sheet having a ratio of thermal diffusivity in horizontal and vertical directions of 300 or more is disclosed. Also, a graphite sheet having a ratio of thermal diffusivity in a vertical direction of 2.0 mm/s or less is disclosed. The graphite sheet has excellent thermal conductivity in horizontal and vertical directions and excellent flexibility at the same time and can be produced at low manufacturing cost, thereby holding an economic advantage.

Graphite sheet and method for manufacturing same

A silicon carbide ingot manufacturing method and a silicon carbide ingot manufacturing system are provided. The silicon carbide ingot manufacturing method and the silicon carbide ingot manufacturing system may change a temperature gradient depending on the growth of an ingot by implementing a guide which has a tilted angle to an external direction from the interior of a reactor, in an operation to grow an ingot during a silicon carbide ingot manufacturing process.

Silicon carbide ingot manufacturing method and silicon carbide ingot manufactured thereby

The embodiment relates to a method for preparing a graphite sheet having a high thermal conductivity at a low cost without using an expensive polyimide film.

Method for preparing graphite sheet

The present invention provides a graphite sheet having a ratio of thermal diffusivity in horizontal and vertical directions of 300 or more. Also, the present invention provides a graphite sheet having a ratio of thermal diffusivity in a vertical direction of 2.0 mm/s or less. The graphite sheet has excellent thermal conductivity in horizontal and vertical directions and excellent flexibility at the same time and can be produced at low manufacturing cost, thereby holding an economic advantage.

Growing community of inventors

Suwon-si, South Korea

Jung Doo Seo