Samsung Electronics Co., Ltd.

Jung-Dae Park

Kwang-Shin Lim

Tae-Hyo Choi

Seung-Ki Chae

Pil-Kwon Jun

Hun-Jung Yi

Pil-kwon Jun

Yang-Koo Lee

Da-Hee Lee

Se-Yeon Kim

Myoung-Ok Han

Chang-Ho Lee

Ki-Hyun Kim

Jin-Ho Kim

Jae-Ho Kim

Dong-Won Kim

Sang-Mun Chon

Jung-hoon Kim

Yeong-Cheol Lee

Jin-A Ryu

Sang-Mi Lee

Kun-Hyung Lee

Hyun-Young Park

Nae-ry Yu

Young Sub You

Min-Soo Suh

Dong-Won Hwang

Sang-Eon Lee

Yoon-Mi Lee

Dong-Chul Heo

Min-Seon Lee

Du-Sik Bae

Hang-Ryong Lim

Bo-Yong Lee

Se-Won Ko

A substrate carrier may include a carrier body and a first sensor unit. The carrier body may include an internal space, an inlet port and an outlet port. The internal space may be configured to receive a substrate. A purge gas may be introduced into the internal space through the inlet port. A gas in the internal space may be exhausted through the outlet port. The first sensor unit may be at the outlet port and configured to detect environmental properties of the internal space in real time. Thus, a generation or cause of a contaminant in the carrier body may be accurately identified.

Substrate carrier

An evaluation system of block copolymer patterns includes a supplier, a plurality of analyzers, and a homopolymer interference remover. The supplier provides a sample including a block copolymer and a homopolymer. The analyzers measure a molecular weight of the block copolymer in the sample, measure a preliminary block ratio, the preliminary block ratio corresponding to a total ratio in the sample of each block in the block copolymer, and selectively measure a ratio of the homopolymer in the sample. The homopolymer interference remover subtracts the ratio of the homopolymer from the preliminary block ratio.

Evaluation systems of block copolymer patterns

In a method of detecting inhomogeneity of a layer, an incident light may be irradiated to at least two regions of the layer at a first incident angle position. First reflected lights reflected from the two regions of the layer may be sensed. The incident light may be irradiated to the at least two regions of the layer at a second incident angle position. Second reflected lights reflected from the two regions of the layer may be sensed. The first reflected lights and the second reflected lights may be compared with each other to obtain the inhomogeneity of the layer. Thus, the layer having a spot may be found.

Methods of detecting inhomogeneity of a layer and apparatus for performing the same

A semiconductor wet etchant includes deionized water, a fluorine-based compound, an oxidizer and an inorganic salt. A concentration of the fluorine-based compound is 0.25 to 10.0 wt % based on a total weight of the etchant, a concentration of the oxidizer is 0.45 to 3.6 wt % based on a total weight of the etchant, and a concentration of the inorganic salt is 1.0 to 5.0 wt % based on a total weight of the etchant. The inorganic salt comprises at least one of an ammonium ion (NH) and a chlorine ion (Cl).

Semiconductor wet etchant and method of forming interconnection structure using the same

A cleaning solution for a quartz part and a method for cleaning the quartz part are provided. The cleaning solution includes from about 5 to about 35 wt % of an ammonium compound, from about 7 to about 55 wt % of an acidic oxidizing agent, from about 5 to about 30 wt % of a fluorine compound and a remaining amount of water. Residual thin films and impurities on the surface of the quartz part may be removed while reducing the damage onto the quartz part.

Method of cleaning a quartz part

A method of manufacturing a semiconductor device includes preparing a substrate on which a fuze line containing copper is formed. The method further includes cutting the fuze line by emitting a laser beam, and applying a composition for etching copper to the substrate to finely etch a cutting area of the fuze line and to substantially remove at least one of a copper residue and a copper oxide residue remaining near the cutting area. The composition for etching copper includes about 0.01 to about 10 percent by weight of an organic acid, about 0.01 to 1.0 percent by weight of an oxidizing agent, and a protic solvent.

Methods of manufacturing a semiconductor device using compositions for etching copper

In a cleaning composition, a method of cleaning a semiconductor substrate and a method of manufacturing a semiconductor device, the cleaning composition includes about 0.5 to about 5% by weight of an organic ammonium hydroxide compound, about 0.1 to about 3% by weight of a fluoride compound, about 0.1 to about 3% by weight of a buffering agent, about 0.5 to about 5% by weight of an etching accelerant, and a remainder of water.

Semiconductor substrate cleaning methods, and methods of manufacture using same

In a composition for removing a polymeric contaminant that may remain on an apparatus for manufacturing a semiconductor device and a method of removing a polymeric contaminant using the composition, the composition includes from about 5 to 10 percent by weight of a fluoride salt, from about 5 to 15 percent by weight of an acid or a salt thereof, and from about 75 to 90 percent by weight of an aqueous solution of glycol. The composition can effectively remove the polymeric contaminant from the apparatus within a relatively short period of time, and suppress damages to parts of the apparatus.

Composition for removing a polymeric contaminant and method of removing a polymeric contaminant using the same

A composition for removing a photoresist includes about 5 to about 20 percent by weight of an alcoholamide compound, about 15 to about 60 percent by weight of a polar aprotic solvent, about 0.1 to about 6 percent by weight of an additive, and pure water. The alcoholamide compound is chemically structured as follows: where Ris a hydroxyl group or a hydroxyalkyl group, and Ris a hydrogen atom or a hydroxyalkyl group.

Composition for removing a photoresist, method of preparing the composition, method of removing a photoresist and method of manufacturing a semiconductor device using the composition

Disclosed are a composition for removing photoresist, a method of removing photoresist and a method of manufacturing a semiconductor device using a composition. The composition may include a ketone compound and a first polar aprotic solvent. The composition may also include the ketone compound and a second polar aprotic solvent. Moreover, the composition may include the first polar aprotic solvent and a second polar aprotic solvent with or without the ketone compound. The first polar aprotic solvent has at least one of an ether compound and an ester compound, and the second polar aprotic solvent has at least one of a sulfur-containing compound and a nitrogen-containing compound.

Composition for removing photoresist, method of removing photoresist and method of manufacturing a semiconductor device using the same

An etching solution for silicon oxide may be used in a process for enlarging an opening formed through a silicon oxide layer. The etching solution includes about 0.2 to about 5.0 percent by weight of a hydrogen fluoride solution, about 0.05 to about 20.0 percent by weight of an ammonium fluoride solution, about 40.0 to about 70.0 percent by weight of an alkyl hydroxide solution and remaining water. The etching solution may etch the silicon oxide layer without damage to a metal silicide layer exposed by the opening.

Etching solution for silicon oxide method of manufacturing a semiconductor device using the same

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Seoul, South Korea

Jung-Dae Park