United Microelectronics Corp.

Jung-Chun Lin

Tony Lin

Jih-Wen Chou

A SEG combined with tilt implant method for forming semiconductor device is disclosed. The method includes providing a semiconductor structure which comprises an active area in between isolation regions in a substrate with the active area having a gate electrode formed thereon, wherein a spacer is formed on the sidewall of said gate electrode. Then, selective epitaxial growth regions are formed on the active area and the gate electrode. Next, the active area is implanted with an angle to form source/drain regions beside the bottom edge of the gate electrode. Then, the salicide process and backend processes are performed.

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Kaohsiung, Taiwan

Jung-Chun Lin