Samsung Electronics Co., Ltd.

Jung-Chak Ahn

Kyung-ho Lee

Bum-Suk Kim

Eun-Sub Shim

Kyung-Ho Lee

Moo-Sup Lim

Yi-Tae Kim

Dong-yoon Jang

Sung-Ho Choi

Min-Seok Oh

Jong-Jin Lee

Hee-geun Jeong

Young-sun Oh

Yoon-Dong Park

Young-chan Kim

Suk-Pil Kim

June-mo Koo

Young-hwan Park

Chang-rok Moon

Sang-Jun Choi

Hoon-sang Oh

Dae-lok Bae

Tetsuo Asaba

Seungjoo Nah

Ju-Hyun Ko

Yi-tae Kim

Young-woo Jung

Tae-Sub Jung

Kyoung-Sik Moon

Chris Hong

Kang-Sun Lee

Wook Su Lee

Kyoung-won Na

Tae-Yon Lee

Su-Hun Lim

Sae-Young Kim

Dong-Young Lee

Alexander Getman

Hyung-Jin Bae

Yong-Jei Lee

Ju-hyun Ko

Hae-Kyung Kong

Yun-Ho Jang

Myung-won Lee

Dong-young Jang

Shay Hamami

Joo-yeong Gong

Sang-joo Lee

Seung-Wook Lee

Jun-Suk Lee

Hoon-Sang Oh

Young-heub Jang

Kwang-il Jung

Young-Bae Kee

Sung-In Hwang

An image sensor includes a plurality of photoelectric detectors, a plurality of color filters, and at least one pixel isolation region between adjacent ones of the photoelectric detectors. The color filters include a white color filter, and the color filters correspond to respective ones of the photoelectric detectors. The at least one pixel isolation region serves to physically and at least partially optically separate the photoelectric detectors from one another.

Method of manufacturing image sensor for reducing crosstalk characteristic

An image sensor having pixels that include two patterned semiconductor layers. The top patterned semiconductor layer contains the photoelectric elements of pixels having substantially 100% fill-factor. The bottom patterned semiconductor layer contains transistors for detecting, resetting, amplifying and transmitting signals charges received from the photoelectric elements. The top and bottom patterned semiconductor layers may be separated from each other by an interlayer insulating layer that may include metal interconnections for conducting signals between devices formed in the patterned semiconductor layers and from external devices.

Pixel having two semiconductor layers, image sensor including the pixel, and image processing system including the image sensor

A semiconductor device includes a light-receiving element which outputs electric charges in response to incident light, and a drive transistor which is gated by an output of the light-receiving element to generate a source-drain current in proportion to the incident light, wherein the drive transistor include a first gate electrode, a first channel region which is disposed under the first gate electrode, first source-drain regions which are disposed at respective ends of the first channel region and that have a first conductivity type, and a first channel stop region which is disposed on a side of the first channel region, and that separates the light-receiving element and the first channel region, the first channel stop region having a second conductivity type that is different from the first conductivity type.

Semiconductor image sensors having channel stop regions and methods of fabricating the same

An image sensor includes a substrate comprising a first face and a second surface which faces the first surface and on which light is incident, a semiconductor photoelectric conversion device on the substrate, a gate electrode located between the first surface of the substrate and the semiconductor photoelectric conversion device and extending in a first direction perpendicular to the first surface, and an organic photoelectric conversion device stacked on the second surface of the substrate.

Image sensor including photoelectric conversion devices

Provided is a complementary metal-oxide-semiconductor (CMOS) image sensor. The CMOS image sensor can include a substrate having a first device isolation layer defining and dividing a first active region and a second active region, a photodiode disposed in the substrate and can be configured to vertically overlap the first device isolation layer, a transfer gate electrode can be disposed in the first active region and can be configured to vertically overlap the photodiode, and a floating diffusion region can be in the first active region. The transfer gate electrode can be buried in the substrate.

CMOS image sensors including vertical transistor

Provided are unit pixels for image sensors and pixel arrays including the same. The unit pixels include a first pixel including first and second photo diodes which are adjacent to each other, and a first deep trench isolation (DTI) fully surrounding sides of the first and second photo diodes and electrically separating the first pixel from other pixels adjacent to the first pixel. The first pixel includes a second DTI positioned between the first photo diode and the second photo diode and having one side formed to be spaced apart from the first DTI. The first pixel also includes a color filter positioned on the first and second photo diodes and fully overlapping the first and second photo diodes. The first pixel further includes a floating diffusion node electrically connected with the first and second photo diodes. The first and second photo diodes share one floating diffusion node.

Unit pixels for image sensors and pixel arrays comprising the same

Image sensor for reducing crosstalk characteristic and method of manufacturing the same

An image sensor includes first pixels and a first source follower transistor, which are disposed adjacent to each other in a first pixel area in a column direction, and second pixels and a second source follower transistor, which are formed in a second pixel area adjacent to the first pixel area in a row direction by the same number of the first pixels, wherein when the first pixels share the first source follower transistor and the second pixels share the second source follower transistor, while pixels selected from the same row are activated, the first source follower transistor and the second source follower transistor being activated are disposed so that locations thereof have a diagonal symmetry.

Image sensors having reduced interference between pixels

A pixel of an image sensor includes a photoelectric conversion region formed in a semiconductor substrate, a floating diffusion region formed in the semiconductor substrate, the floating diffusion region being spaced apart from the photoelectric conversion region, a vertical transfer gate extending from a first surface of the semiconductor substrate into a recess in the semiconductor substrate, and configured to form a transfer channel between the photoelectric conversion region and the floating diffusion region, and an impurity region surrounding the recess. The impurity region has a first impurity concentration at a region adjacent to a side of the recess, and a second impurity concentration higher than the first impurity concentration at a region adjacent to the bottom of the recess.

Pixel of an image sensor, and image sensor

Growing community of inventors

Yongin-si, South Korea

Jung-Chak Ahn