Samsung Electronics Co., Ltd.

Jung-Bong Yun

Chang-Won Choi

Doo-Whan Choi

Gee-Ill Seo

Hee-Jun Kim

A method of forming a transistor is provided. An upper portion of a substrate is partially removed forming a trench. An isolation layer partially fills the trench, forming active patterns of the substrate. The isolation layer has a void therein. A photoresist pattern is formed on the active patterns and the isolation layer. The active patterns and the isolation layer are partially removed using the photoresist pattern as an etching mask, thus forming a recess. A plasma treatment process is performed, removing the photoresist pattern and filling the void. A gate insulation layer and a gate electrode fill the recess.

Methods of forming transistors and methods of manufacturing semiconductor devices including the transistors

A charger assembly for a wafer carrying apparatus, includes a charger for conveying wafers loaded in a plurality of grooves of a boat to a subsequent manufacturing process. The charger has a plurality of wafer guiders disposed side by side and has a first gap therebetween. The charger further includes an adjusting structure by which the first gap between the plurality of guiders is aligned with a second gap formed between groove groups of the boat. A pair of supporting members are detachably attached to the wafer guiders by fasteners to allow lateral movement of the wafers guiders to ensure correct alignment of the grooves of the boat and charger.

Growing community of inventors

Hwaseong-si, South Korea

Jung-Bong Yun