Samsung Electronics Co., Ltd.

Jung-bin Yun

Seung-eon Ahn

Kyung-ho Lee

Hye-Young Kim

Byoung-ho Park

You-seon Kim

An image sensor may optimize control of each pixel and/or each photodiode therein according to various pixel structures therein. An electronic apparatus may include the image sensor. The image sensor may include a plurality of pixels, each including a photodiode and a transfer transistor configured to transfer charges accumulated in the photodiode to a floating diffusion floating diffusion region, and transfer transistor lines respectively connected to gate electrodes of the transfer transistors of the pixels. The transfer transistor lines may receive voltages having different magnitudes.

Image sensors with optimized control of transfer transistors and electronic apparatuses including the same

Image sensors and electronic apparatuses including the same

Example embodiments relate to a method of fabricating a memory device and a memory device. The method of fabricating a memory device comprises forming a lower electrode and an oxide layer on a lower structure and radiating an energy beam on a region of the oxide layer. The memory device comprises a lower structure and an oxide layer and a lower structure formed on the lower structure, the oxide layer including an electron beam radiation region that received radiation from an electron beam source creating an artificially formed current path through the oxide layer to the lower electrode. A reset current of the memory device may be decreased and stabilized.

Method of fabricating a resistance based memory device and the memory device

Growing community of inventors

Hwaseong-si, South Korea

Jung-bin Yun