Samsung Electronics Co., Ltd.

Jung Bin Yun

Eun Sub Shim

Jung Wook Lim

Kyung Ho Lee

Sung Ho Choi

Kyungho Lee

Jung Hoon Park

Min Ji Jung

Sung-Ho Choi

Seungjoon Lee

JungChak Ahn

Jihun Kim

Hyuk Soon Choi

Young Gu Jin

Kwang-Min Lee

Yoon Dong Park

Junghyung Pyo

Sungchul Kim

Wonchul Choi

Hongsuk Lee

Hyoung Soo Ko

Woo Joo Kim

Hwanwoong Kim

Sung Soo Choi

Sung-ho Choi

Hyoungsoo Ko

Wonjoo Kim

Seung Won Cha

Mun Hwan Kim

Seoyun Park

Seoung Hyun Kim

Chan Hyung Kim

Heesang Kwon

An image sensor according to the present disclosure includes: a first pixel group, which includes a first pixel unit corresponding to a first color, and a plurality of first pixels arranged with an m×n form. The image sensor further includes a second pixel unit, which corresponds to a second color, and a plurality of second pixels arranged with the m×n form. The image sensor further includes a third pixel unit, which corresponds to a third color, and a plurality of third pixels arranged with the m×n form, and m and n are natural numbers greater than or equal to 3. A first micro lens is formed on the first pixel unit and shared by at least two adjacent first pixels in a first direction among the plurality of first pixels.

Image sensor including phase detection pixels

Disclosed is an image sensor comprising a semiconductor substrate that includes first through fourth pixel regions, each including first through fourth photoelectric conversion sections, and a pixel separation structure disposed in the semiconductor substrate and separating the first through fourth pixel regions from each other. The second pixel region is spaced apart in a first direction from the first pixel region. The fourth pixel region is spaced apart in a second direction from the first pixel region. The second direction intersects the first direction. The semiconductor substrate includes first impurity sections disposed on corresponding central portions of the first through fourth pixel regions, and a second impurity section disposed between the second and fourth pixel regions. Impurities doped in the first impurity sections have a conductivity type different from that of impurities doped in the second impurity section.

Image sensor with pixel separation structure

An electronic device includes an image sensor that generates image data, and an image processor that processes the image data. The image sensor includes a pixel array including pixels repeatedly disposed along a row direction and a column direction. Each of pixels belonging to a first row of rows of the pixel array includes sub-pixels each connected to one of a first transmission metal line, a second transmission metal line, and a third transmission metal line. In response to signals respectively applied to the first to third transmission metal lines, at least a part of charges integrated at the sub-pixels of the pixels belonging to the first row from among the pixels is diffused to corresponding floating diffusion areas.

Image sensor and electronic device including the same

Disclosed is a complementary metal oxide semiconductor (CMOS) image sensor. The image sensor comprises a first separation zone in a substrate, the first separation zone defining first and second pixel regions arranged in a first direction, the first separation zone including first parts substantially parallel extending in the first direction, and the substrate including a first active region vertically overlapping one of the first parts and a second active region vertically overlapping another of the first parts. The image sensor further comprises first and second photoelectric conversion devices arranged in the first direction on at least one of the first and second pixel regions in the substrate, and a source follower gate on the first active region of the substrate.

CMOS image sensors

A pixel array including pixels arranged in a matrix shape is provided. The pixels have a same structure and are separated from each other by front deep trench isolation (FDTI). A first pixel among the pixels includes a first floating diffusion region, a first group of photoelectric conversion elements, a first group of charge transfer transistors, a first source follower transistor, and a first transistor, a second transistor, and a first reset transistor connected in series between the first floating diffusion region and a voltage supply line. One of the first transistor, the second transistor, and the first reset transistor is formed in a first sub-pixel region. At least another one of the first transistor, the second transistor, and the first reset transistor is formed in a second sub-pixel region. The first sub-pixel region and the second sub-pixel region are separated from each other by the FDTI.

Pixel array and devices including the same

Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.

Image sensors

An image sensor includes a photoelectric converter to generate charges in response to incident light and to provide the generated charges to a first node, a transfer transistor to provide a voltage of the first node to a floating diffusion node based on a first control signal, a source follower transistor to provide a voltage of the floating diffusion node as a unit pixel output, a correlated double sampler (CDS) to receive the unit pixel output and to convert the unit pixel output into a digital code. The first control signal having first, second, and third voltages is maintained at the second voltage in a period between when the voltage of the first node is provided to the floating diffusion node and when the CDS is provided with the voltage of the first node as the unit pixel output.

Image sensor

An image sensor includes a substrate including unit pixels. Each of the unit pixels includes photoelectric conversion elements and storage diodes.

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Hwaseong-si, South Korea

Jung Bin Yun