Samsung Electronics Co., Ltd.

Jung Been Im

Young-Goo Ko

Yeong-Jae Woo

Jong-Hyun Kim

Han Bin Yoon

Jung-Yeon Yoon

Change-hee Lee

Dong Hyun Song

An operating method of a memory controller configured to control a nonvolatile memory device including a plurality of memory cells is provided. The operating method includes: programming evaluation data into desired memory cells among the plurality of memory cells; performing initial verify shift (IVS) charge loss evaluation on the desired memory cells after a time elapses from a time point when the evaluation data is programmed, the IVScharge loss evaluation including an operation of detecting threshold voltage variation of the desired memory cells over a period based on the time elapsed from the time point when the evaluation data is programmed; and storing a result of the IVScharge loss evaluation; and adjusting levels of a plurality of read voltages used in the nonvolatile memory device based on the stored result of the charge loss evaluation.

Nonvolatile memory system and operating method of memory controller

Storage devices herein include a non-volatile memory and a controller configured to perform a read operation on a physical page of the non-volatile memory in response to a read request on a logical page of the non-volatile memory from a host. The controller may include a mapping manager configured to manage a plurality of logical blocks by a logical unit. The mapping manager may include a unit map table including a correlation between the logical unit and a physical unit corresponding to the logical unit. Additionally, the mapping manager may be configured to change a mapping method according to whether the unit map table includes a physical unit corresponding to a logical unit including a logical page requested by the host. Related user devices and electronic devices are also provided.

Non-volatile memory devices using a mapping manager

A method of managing a page buffer of a non-volatile memory device comprises programming least significant bit (LSB) page data from an LSB page buffer into a page of memory cells, and retaining the LSB page data in the LSB page buffer until most significant bit (MSB) page data corresponding to the LSB page data is programmed in the page.

Method and apparatus for controlling page buffer of non-volatile memory device

A non-volatile memory controller, system and method capable of processing a next request as an interrupt before completing a current operation are disclosed. The non-volatile memory system includes a first memory storing meta data loaded from a flash memory; a second memory storing the meta data copied from the first memory; and a flash memory controller copying the meta data from the first memory to the second memory, changing the meta data in the second memory, and then re-copying the changed meta data from the second memory to the first memory during a first-type operation that requires changes in the meta data.

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Anyang-si, South Korea

Jung Been Im