Samsung Electronics Co., Ltd.

Jung-Been Im

Dong-Hyun Song

Jang-Hwan Kim

Hye-Young Kim

Change-Hee Lee

Young-Joon Choi

Shea-Yun Lee

Dong-Gi Lee

Young-Goo Ko

Jung-Yeon Yoon

Change-hee Lee

A memory system including non-volatile memory devices and a corresponding refresh method are disclosed. The method groups memory blocks of the non-volatile memory devices into memory groups, determines a refresh sequence for the memory groups, and refreshes the memory groups in accordance with the refresh sequence.

Nonvolatile memory system and refresh method

A non-volatile memory controller, system and method capable of processing a next request as an interrupt before completing a current operation are disclosed. The non-volatile memory system includes a first memory storing meta data loaded from a flash memory; a second memory storing the meta data copied from the first memory; and a flash memory controller copying the meta data from the first memory to the second memory, changing the meta data in the second memory, and then re-copying the changed meta data from the second memory to the first memory during a first-type operation that requires changes in the meta data.

Non-volatile memory controller processing new request before completing current operation, system including same, and method

A memory apparatus is provided. The memory apparatus includes a first memory chip, a second memory chip and a control unit configured to manage a first mapping table for the first memory chip and a second mapping table for the second memory chip. If a first physical address of the second memory chip is allocated to a first logical address of the first memory chip, the control unit is configured to update a second logical address of the second memory chip to correspond to the first physical address of the second memory chip in the second mapping table and update the first logical address of the first memory chip to correspond to the second logical address of the second memory chip in the first mapping table.

Memory apparatus

Integrated circuit systems include a non-volatile memory device (e.g, flash EEPROM device) and a memory processing circuit. The memory processing circuit is electrically coupled to the non-volatile memory device. The memory processing circuit is configured to reallocate addressable space within the non-volatile memory device. This reallocation is performed by increasing a number of physical addresses within the non-volatile memory device that are reserved as redundant memory addresses, in response to a capacity adjust command received by the memory processing circuit.

Methods and apparatus for reallocating addressable spaces within memory devices

Methods of operating a non-volatile memory device that includes a first data block that stores first data and a first log block that stores an updated version of at least some of the first data is provided in which valid portions of the first data in the first data block are copied to a free block that has no data to generate a second data block. The updated version of at least some of the first data from the first log block is copied to the second data block. The first log block is designated as a reusable log block without erasing the data therefrom in response to at least one predetermined condition being satisfied.

Growing community of inventors

Anyang-si, South Korea

Jung-Been Im